Erratum: Thermoelectric properties of nanocrystalline silicon from a scaled-up synthesis plant (Advanced Engineering Materials (2013) 15 (379) DOI: 10.1002/adem.201200233);Thermoelectric properties of nanocrystalline silicon from a scaled-up synthesis plant

Advanced Engineering Materials

Volumn 15, Issue 5, 2013, Pages 379-385

  Kessler, Victor ^a   Gautam, Devendraprakash ^a   Hülser, Tim ^b   Spree, Mathias ^b   Theissmann, Ralf ^a   Winterer, Markus ^a   Wiggers, Hartmut ^a   Schierning, Gabi ^a   Schmechel, Roland ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b Institute of Energy and Environmental Technology EV (IUTA)   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITE SIZE; ENERGY HARVESTING; HIGH TEMPERATURE APPLICATIONS; NANOCRYSTALS; NANOPARTICLES; SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

BORON-DOPED SILICON; CONTINUOUS GAS PHASE; HIGH SINTERING TEMPERATURES; NANOCRYSTALLINE BULK; SILICON NANOPARTICLES; SINGLE CRYSTALLINE SILICON; SINTERING TEMPERATURES; THERMOELECTRIC PROPERTIES;

NANOCRYSTALLINE SILICON;

EID: 84877278847     PISSN: 14381656     EISSN: 15272648     Source Type: Journal    
DOI: 10.1002/adem.201300182     Document Type: Erratum

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