2-D differential folded vertical hall device fabricated on a P-type substrate using CMOS technology

IEEE Sensors Journal

Volumn 13, Issue 6, 2013, Pages 2253-2262

  Sung, Guo Ming ^a   Yu, Chih Ping ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Hall effect; magnetic semiconductors; magnetic sensors; magnetoresistance; magnetotransistor

Indexed keywords

CONDUCTING CHANNELS; DOMINANT MECHANISM; HIGH NONLINEARITY; MAGNETOSENSITIVITY; MAGNETOTRANSISTORS; MEASUREMENT RESULTS; NON-LINEARITY ERRORS; TWO DIMENSIONAL (2 D);

CHEMICAL REACTIONS; HALL EFFECT; HALL EFFECT DEVICES; MAGNETIC SEMICONDUCTORS; MAGNETIC SENSORS; MAGNETORESISTANCE;

CMOS INTEGRATED CIRCUITS;

EID: 84877276503     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2013.2246564     Document Type: Article

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