Interaction between magnetoresistor and magnetotransistor in the longitudinal and folded vertical hall devices

IEEE Sensors Journal

Volumn 4, Issue 6, 2004, Pages 749-758

  Sung, Guo Ming ^a  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Folded vertical Hall device; Hall effect; Magnetoresistor (MR); Magnetosensor; Magnetotransistor (MT)

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MAGNETOMETERS; MAGNETORESISTANCE; SENSITIVITY ANALYSIS;

FOLDED VERTICAL HALL DEVICE; MAGNETOSENSITIVITY; MAGNETOSENSORS; MAGNETOTRANSISTORS (MT);

HALL EFFECT DEVICES;

EID: 10044294800     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2004.836857     Document Type: Article

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