Direct patterning of solution-processed organic thin-film transistor by selective control of solution wettability of polymer gate dielectric

Applied Physics Letters

Volumn 102, Issue 15, 2013, Pages

  Fujisaki, Yoshihide ^a   Ito, Hiroshi ^b   Nakajima, Yoshiki ^a   Nakata, Mitsuru ^a   Tsuji, Hiroshi ^a   Yamamoto, Toshihiro ^a   Furue, Hirokazu ^b   Kurita, Taiichiro ^a   Shimidzu, Naoki ^a  

^a NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C. THIN FILM TRANSISTOR (TFT); CRYSTALLINE DOMAINS; GAS PLASMA TREATMENTS; ORGANIC THIN FILM TRANSISTORS; POLYCRYSTALLINE STRUCTURE; POLYMER GATE DIELECTRICS; SOLUTION-PROCESSED; TETRAFLUOROMETHANE;

PLASMA APPLICATIONS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS;

GATE DIELECTRICS;

EID: 84877150224     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802499     Document Type: Article

References (31)

1. Organic Field-Effect Transistors, edited by, Z. Bao, and, J. Locklin, (CRC, Boca Raton, FL, 2007).
2. D. J. Gundlach, J. E. Royer, S. K. Park, S. Subramanian, O. D. Jurchescu, B. H. Hamadani, A. J. Moad, R. J. Kline, L. C. Teague, O. Kirillov, C. A. Richter, J. G. Kushmerick, L. J. Richter, S. R. Perkin, T. N. Jackson, and J. E. Anthony, Nature Mater. 7, 216 (2008). 10.1038/nmat2122
3. S. K. Park, J. E. Anthony, and T. N. Jackson, IEEE Electron Device Lett. 28, 877 (2007). 10.1109/LED.2007.905374
4. A. C. Arias, J. Daniel, S. Sambandan, T. N. Ng, B. Russo, B. Krusor, and R. A. Street, Proc. SPIE 7054, 70540L1 (2008). 10.1117/12.795741
5. H. Minemawari, T. Yamada, H. Matsui, J. Tsutsumi, S. Haas, R. Chiba, R. Kumai, and T. Hasegawa, Nature (London) 475, 364 (2011). 10.1038/nature10313
6. J. Soeda, Y. Hirose, M. Yamagishi, A. Nakao, T. Uemura, K. Nakayama, M. Uno, Y. Nakazawa, K. Takimiya, and J. Takeya, Adv. Mater. 23, 3309 (2011). 10.1002/adma.201101027
7. H. Li, B. C. Tee, J. J. Cha, Y. Cui, J. W. Chung, S. Y. Lee, and Z. Bao, J. Am. Chem. Soc. 134, 2760 (2012). 10.1021/ja210430b
8. J. Smith, W. Zhang, R. Sougrat, K. Zhao, R. Li, D. Cha, A. Amassian, M. Heeney, I. McCulloch, and T. Anthopoulos, Adv. Mater. 24, 2441 (2012). 10.1002/adma.201200088
9. T. N. Ng, S. Sambandan, R. Lujan, A. C. Arias, C. R. Newman, H. Yan, and A. Facchetti, Appl. Phys. Lett. 94, 233307 (2009). 10.1063/1.3153510
10. S. Liu, H. A. Becerril, M. C. LeMieux, W. M. Wang, J. H. Oh, and Z. Bao, Adv. Mater. 21, 1266 (2009). 10.1002/adma.200802201
11. K. C. Dickey, S. Subramanian, J. E. Anthony, L. H. Han, S. Chen, and Y. L. Loo, Appl. Phys. Lett. 90, 244103 (2007). 10.1063/1.2748841
12. T. Minari, M. Kano, T. Miyadera, S.-D. Wang, Y. Aoyagi, M. Seto, T. Nemoto, S. Isoda, and K. Tsukagoshi, Appl. Phys. Lett. 92, 173301 (2008). 10.1063/1.2912822
13. M. Kano, T. Minari, and K. Tsukagoshi, Appl. Phys. Express 3, 051601 (2010). 10.1143/APEX.3.051601
14. W. Kang, M. Kitamura, and Y. Arakawa, Appl. Phys. Express 4, 121602 (2011). 10.1143/APEX.4.121602
15. J. Veres, S. Ogier, G. Lloyd, and D. de Leeuw, Chem. Mater. 16, 4543 (2004). 10.1021/cm049598q
16. J. Jang, S. Nam, D. S. Chung, S. H. Kim, W. M. Yun, and C. E. Park, Adv. Funct. Mater. 20, 2611 (2010). 10.1002/adfm.201000383
17. J. Li, J. Du, J. Xu, H. L. W. Chan, and F. Yan, Appl. Phys. Lett. 100, 033301 (2012). 10.1063/1.3678196
18. Y. Isogai, T. Katoh, K. Sugitani, M. Hanmura, M. Tada, Y. Nakajima, Y. Fujisaki, and T. Yamamoto, SID Symp. Dig. 42, 1581 (2011). 10.1889/1.3621167
19. Y. Fujisaki, T. Kono, Y. Nakajima, T. Takei, J. Nishida, T. Yamamoto, and Y. Yamashita, Appl. Phys. Lett. 97, 133303 (2010). 10.1063/1.3491815
20. G. Lloyd, T. Backlund, P. Brookes, L. W. Tan, P. Wierzchowiec, J.-Y. Lee, S. Bain, M. James, J. Canisius, S. Tierney, K. Kawamata, and T. Wakimoto, Proc. IDW 10, 469 (2010).
21. Y. Fujisaki, Y. Nakajima, T. Takei, H. Fukagawa, T. Yamamoto, and H. Fujikake, IEEE Trans. Electron Devices 59, 3442 (2012). 10.1109/TED.2012.2220968
22. Y. H. Yan, M. B. Park, and C. Y. Yue, Langmuir 21, 8905 (2005). 10.1021/la051580m
23. C. S. Kim, S. J. Jo, J. B. Kim, S. Y. Ryu, J. H. Noh, H. K. Baikb, S. J. Lee, and Y. S. Kim, Appl. Phys. Lett. 91, 063503 (2007). 10.1063/1.2767779
24. Z. Liu, H. A. Becerril, M. E. Roberts, Y. Nishi, and Z. Bao, IEEE Trans. Electron Devices 56, 176 (2009). 10.1109/TED.2008.2010580
25. M. Ikawa, T. Yamada, H. Matsui, H. Minemawari, J. Tsutsumi, Y. Horii, M. Chikamatsu, R. Azumi, R. Kumai, and T. Hasegawa, Nat. Commun. 3, 1176 (2012). 10.1038/ncomms2190
26. T. Jung, A. Dodabalapur, R. Wenz, and S. Mohapatra, Appl. Phys. Lett. 87, 182109 (2005). 10.1063/1.2117629
27. S. Lee, B. Koo, J. Shin, E. Lee, and H. Park, Appl. Phys. Lett. 88, 162109 (2006). 10.1063/1.2196475
28. N. B. Ukah, J. Granstrom, R. R. S. Gari, G. M. King, and S. Guha, Appl. Phys. Lett. 99, 243302 (2011). 10.1063/1.3669696
29. M. McDowell, I. G. Hill, J. E. McDermott, S. L. Bernasek, and J. Schwartz, Appl. Phys. Lett. 88, 073505 (2006). 10.1063/1.2173711
30. S. D. Wang, T. Miyadera, T. Minari, Y. Aoyagi, and K. Tsukagoshi, Appl. Phys. Lett. 93, 043331 (2008).
31. K.-D. Jung, Y. C. Kim, H. Shin, B.-G. Park, J. D. Lee, E. S. Cho, and S. J. Kwon, Appl. Phys. Lett. 96, 103305 (2010). 10.1063/1.3339877