Fowler-Nordheim field emission from carbon nanotubes under intense electric field

Journal of Computational and Theoretical Nanoscience

Volumn 10, Issue 3, 2013, Pages 664-668

  Bhattacharya, S ^a   De, D ^b,c   Ghosh, S ^d   Ghatak, K P ^e,f  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^c MAULANA ABUL KALAM AZAD UNIVERSITY OF TECHNOLOGY   (India)

^d INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

^e UNIVERSITY OF CALCUTTA   (India)

^f NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Carbon nanotubes; Fowler Nordheim field emission; Intense electric field

Indexed keywords

CHIRAL INDEX; DISPERSION LAW; FIELD EMITTED CURRENTS; FOWLER-NORDHEIM; NANO SCIENCE AND TECHNOLOGIES; NUMERICAL VALUES; VAN HOVE SINGULARITIES;

CARBON NANOTUBES; FIELD EMISSION;

ELECTRIC FIELDS;

EID: 84876522401     PISSN: 15461955     EISSN: 15461963     Source Type: Journal    
DOI: 10.1166/jctn.2013.2752     Document Type: Article

References (50)

1. S. Bhattacharya, D. De, N. Paitya, S. M. Adhikari, and K. P. Ghatak, Applied Science Letters 6, 348 (2012);
2. P. K. Bose, N. Paitya, S. Bhattacharya, D. De, and K. P. Ghatak, Quantum Matter (2012), (In the press);
3. S. Bhattacharya and K. P Ghatak, Fowler Nordheim Field Emission: Effects in Semiconductor Nanostructures, Springer series in solid state sciences (2012), p. 170 (in press);
4. S. Bhattacharya, D. De, S. M. Adhikari, S. Saha, K. M Chatterjee, S. Chowdhury, and K. P. Ghatak, J. Superlattices and Microstructures 50, 609 (2011);
5. B. Mitra and K. P. Ghatak, Phys. Lett. A 357, 146 (1990); 142A, 401 (1989);
6. N. Paitya, S. Bhattacharya, D. De, S. Ghosh, and K. P. Ghatak, Journal of Nanoengineering and Nanomanufacturing 2, 211 (2012).
7. K. P. Ghatak and M. Mondal, Jour. Mag. Mat. 74, 203 (1988);
8. K. P. Ghatak and B. Mitra, Phys. Lett. 156A, 233 (1991);
9. K. P. Ghatak, A. Ghosal, S. N. Biswas, and M. Mondal, Proc. SPIE, USA 1308, 356 (1990).
10. V. T. Binh and Ch. Adessi, Phys. Rev. Lett. 85, 864 (2000);
11. R. G. Forbes, Ultramicroscopy 79, 11 (1999);
12. J. W. Gadzuk and E. W. Plummer, Rev. Mod. Phys. 45, 487 (1973);
13. J. M. Beebe, B. Kim, J. W. Gadzuk, C. D. Frisbie, and J. G. Kushmerick, Phys. Rev. Lett. 97, 026801 (1999);
14. Y. Feng and J. P. Verboncoeur, Phys. Plasmas 12, 103301 (2005);
15. W. S. Koh and L. K. Ang, Nanotechnology 19, 235402 (2008).
16. S. I. Baranchuk and N. V. Mileshkina, Soviet Phys. Solid State 23, 1715 (1981);
17. P. G. Borzyak and A. A. dadykin, Soviet Phys. Docklady 27, 335 (1982);
18. S. Bono and R. H. Good, Jr, Surface Sci. 134, 272 (1983);
19. S. M. Lyth and S. R. P. Silva, Appl. Phys. Letts. 90, 173124 (2007);
20. C. Xu and X. Sun, Int. Jour. Nanotech. 1, 452 (2004);
21. S. D. Liang and L. Chen, Phys. Rev. Letts. 101, 027602 (2008).
22. E. C. Heeres, E. P. A. M. Bakkers, A. L. Roest, M. Kaiser, T. H. Oosterkamp, and N. de Jonge, Nano Lett. 7, 536 (2007).
23. K. Senthil and K. Yong, Mat. Chem. Phys. 112, 88 (2008).
24. B. H. Kim, M. S. Kim, K. T. Park, J. K. Lee, D. H. Park, J. Joo, S. G. Yu, and S. H. Lee, Appl. Phys. Lett. 83, 539 (2003);
25. Z. S. Wu, S. Z. Deng, N. S. Xu, J. Chen, J. Zhou, and J. Chen, Appl. Phys. Lett. 80, 3829 (2002);
26. Y. W. Zhu, T. Yu, F. C. Cheong, X. J. Xu, C. T. Lim, V. B. C. Tan, J. T. L. Thong, and C. H. Sow, Nanotechnology 16, 88 (2005).
27. I. Shigeo, W. Teruo, O. Kazuyoshi, T. Masateru, U. Satoshi, and N. Norio, J. Vac. Sc. Tech. B 13, 487 (2009).
28. J. Kong, N. R. Franklin, C. Zhou, M. G. Chapline, S. Peng, K. Cho, and H. Dai, Science 287, 622 (2000).
29. P. Kim and C. M. Lieber, Science 286, 2148 (1999).
30. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature 393, 49 (1998).
31. P. G. Collins, A. Zettl, H. Bando, A. Thess, and R. E. Smalley, Science 278, 100 (1997).
32. A. Bacthtold, P. Hadley, T. Nakanish, and C. Dekker, Science 294, 1317 (2001).
33. S. B. Legoas, V. R. Coluci, S. F. Braga, P. Z. Coura, S. O. Dantus, and D. S. Galvao, Nanotechnology 15, S184 (2004).
34. W. Z. Liang, J. Sun, and J. Yang, J. Comp. Theo. Nanoscience 3, 843 (2006);
35. D. Baowan and J. M. Hill, J. Comp. Theo. Nanoscience 5, 302 (2008), and the references cited therein.
36. R. Saito, G. Dresselhaus, and M. S. Dresselhaus, Physical Properties of Carbon Nanotubes, Imperial College Press, London (1998).
37. C. Dekker, Phys. Today 52, 22 (1999).
38. M. Endo, S. Ijima, and M. S. Dresselhaus, Carbon Nanotubes, Pergamon Press, Oxford (1996).
39. T. Maltezopoulos, A. Kubetzka, M. Morgenstern, R. Wiesendanger, S. G. Lemay, and C. Dekker, Appl. Phys. Lett. 83, 1011 (2003).
40. R. Heyd, A. Charlier, and E. McRae, Phys. Rev. B 55, 6820 (1997).
41. J. W. Mintmire and C. T. White, Phys. Rev. Lett. 81, 2506 (1998).
42. M. Abramowitz and I. A. Stegun, Handbook of Mathematical Functions (Dover Publications, New York, USA (1965).
43. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation, Springer, USA (2006).
44. P. K. Chakraborty, S. Choudhury, and K. P. Ghatak, Physica B, The Netherlands 387, 333 (2007).
45. K. P. Ghatak, S. Bhattacharya, and D. De, Springer Series in Materials Science 116 (2009).
46. A. S. Filipchenko, I. G. Lang, D. N. Nasledov, S. T. Pavlov, and L. N. Radaikine, Phys. Stat. Sol (b) 66, 417 (1974).
47. M. Wegener, Extreme Nonlinear Optics, Springer-Verlag, Germany (2005).
48. S. Suzuki, C. Bower, Y. Watanabe, and O. Zhou, Appl. Phys. Lett. 76, 4007 (2000).
49. J. M. Bonard, F. Maier, T. Stökli, A. Chäelain, W. A. de Heer, J.-P. Salvetat, and L. Forr, Ultramicroscopy 73 (1998).
50. S. Zaric, G. N. Ostojic, J. Kono, J. Shaver, V. C. Moore, M. S. Strano, R. H. Hauge, R. E. Smalley, and X. Wei, Science 304, 1129 (2004).