Ab initio study of the effects of pressure and strain on electron-phonon coupling in IV and III-V semiconductors

Physica Status Solidi (B) Basic Research

Volumn 250, Issue 4, 2013, Pages 716-720

  Sjakste, Jelena ^a   Vast, Nathalie ^a   Jani, Hariom ^a   Obukhov, Sergey ^b   Tyuterev, Valeriy ^b  

^a CNRS UMR 3299   (France)

^b TOMSK STATE PEDAGOGICAL UNIVERSITY   (Russian Federation)

Author keywords

Density functional theory; Intervalley scattering; Transport

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRON-PHONON INTERACTIONS; ELECTRONS; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; HYDRAULICS; HYDROSTATIC PRESSURE; III-V SEMICONDUCTORS; PERTURBATION TECHNIQUES; SEMICONDUCTING GERMANIUM;

BIAXIAL TENSILE STRAIN; DEFORMATION POTENTIAL; DENSITY FUNCTIONAL PERTURBATION THEORY; ELECTRON PHONON COUPLINGS; INTERVALLEY SCATTERING; STRAIN DEPENDENCE; TRANSPORT; TRANSPORT SIMULATION;

TENSILE STRAIN;

EID: 84876421732     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.201200526     Document Type: Article

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