Band offsets in complex-oxide thin films and heterostructures of SrTiO 3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

Journal of Applied Physics

Volumn 113, Issue 14, 2013, Pages

  Conti, G ^a,b   Kaiser, A M ^a,b,c,j   Gray, A X ^a,b,d   Nemsak S ^a,b   Palsson G K ^a,b   Son, J ^e   Moetakef, P ^e   Janotti, A ^e   Bjaalie, L ^e   Conlon, C S ^a,b   Eiteneer, D ^a,b   Greer, A A ^a,f   Keqi, A ^a,b   Rattanachata, A ^a,b   Saw, A Y ^a,b   Bostwick, A ^b   Stolte, W C ^b   Gloskovskii, A ^g   Drube, W ^g   Ueda, S ^h   Kobata, M ⁱ   Kobayashi, K ^h   Van De Walle, C G ^e   Stemmer, S ^e   Schneider, C M ^c   Fadley, C S ^a,b   more..

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^e Santa Barbara   (United States)

^f Davis   (United States)

^g DESY   (Germany)

^h NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

ⁱ JAPAN ATOMIC ENERGY AGENCY   (Japan)

^j SPECS SURFACE NANO ANALYSIS GMBH   (Germany)

more..

Author keywords

[No Author keywords available]

Indexed keywords

BURIED INTERFACE; CHARGING EFFECT; EXPERIMENTAL DETERMINATION; FIRST-PRINCIPLES CALCULATION; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; SOFT X-RAY PHOTOELECTRON SPECTROSCOPY; SURFACE CHARGING; VALENCE BAND OFFSETS;

BINDING ENERGY; CALCULATIONS; HETEROJUNCTIONS; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

STRONTIUM TITANATES;

EID: 84876391535     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795612     Document Type: Article

References (30)

1. K. Horn, Appl. Surf. Sci. 166, 1 (2000). 10.1016/S0169-4332(00)00435-9
2. A. Ohtomo and H. Y. Hwang, Nature 427, 423 (2004). 10.1038/nature02308
3. J. Mannhart and D. G. Schlom, Science 327, 1607 (2010). 10.1126/science.1181862
4. S. D. Ha and S. Ramanathan, J. Appl. Phys. 110, 071101 (2011). 10.1063/1.3640806
5. W. R. Frensley, in Chapter 1 of Heterostructures and Quantum Devices, edited by, W. R. Frensley, and, N. G. Einspruch, (VLSI Electronics, 1994).
6. K. van Benthema, C. Elasser, and R. H. French, J. Appl. Phys. 90, 6156 (2001). 10.1063/1.1415766
7. J. Son, P. Moetakef, J. M. LeBeau, D. Ouellette, L. Balents, S. J. Allen, and S. Stemmer, Appl. Phys. Lett. 96, 062114 (2010). 10.1063/1.3309713
8. D. A. Crandles, T. Timusk, J. D. Garrett, and J. E. Greedan, Physica C 201, 407 (1992). 10.1016/0921-4534(92)90491-T
9. P. Moetakef, D. G. Ouellette, J. Y. Zhang, T. A. Cain, S. J. Allen, and S. Stemmer, J. Cryst. Growth 355, 166 (2012). 10.1016/j.jcrysgro.2012.06.052
10. P. Moetakef, J. Y. Zhang, A. Kozhanov, B. Jalan, R. Seshadri, S. J. Allen, and S. Stemmer, Appl. Phys. Lett. 98, 112110 (2011). 10.1063/1.3568894
11. P. Moetakef, T. A. Cain, D. G. Ouellette, J. Y. Zhang, D. O. Klenov, A. Janotti, C. G. Van de Walle, S. Rajan, S. J. Allen, and S. Stemmer, Appl. Phys. Lett. 99, 232116 (2011). 10.1063/1.3669402
12. J. Auleytner and O. Hornfeldt, Ark. Fys. 23, 165 (1963).
13. E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. B 28, 1965 (1983). 10.1103/PhysRevB.28.1965
14. E. T. Yu, D. H. Chow, and T. C. McGill, Phys. Rev. B 38, 12764 (1988). 10.1103/PhysRevB.38.12764
15. S. A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiseret, Appl. Phys. Lett. 77, 1662 (2000). 10.1063/1.1310209
16. S. A. Chambers, T. Droubay, T. C. Kaspar, and M. Gutowski, J. Vac. Sci. Technol. B 22, 2205 (2004). 10.1116/1.1768525
17. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986). 10.1103/PhysRevB.34.5621
18. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
19. J. Heyd, G. E. Scuseria, and M. Ernzerhod, J. Chem. Phys. 118, 8207 (2003); 10.1063/1.1564060
20. J. Heyd, G. E. Scuseria, and M. Ernzerhod, Erratum., J. Chem. Phys. 124, 219906 (2006). 10.1063/1.2204597
21. B. Jalan, J. Cagnon, T. E. Mates, and S. Stemmer, J. Vac. Sci. Technol. A 27, 1365-1368 (2009). 10.1116/1.3253355
22. S. Ueda, Y. Katsuya, M. Tanaka, H. Yoshikawa, Y. Yamashita, S. Ishimaru, Y. Matsushita, and K. Kobayashi, AIP Conf. Proc. 1234, 403 (2010).
23. W. Smekal, W. S. M. Werner, and C. J. Powell, Surf. Interface Anal. 37, 1059 (2005). 10.1002/sia.2097
24. D. A. Shirley, Phys. Rev. B 5, 4709 (1972). 10.1103/PhysRevB.5.4709
25. A. Fujimori, I. Hase, M. Nakamura, H. Namatame, Y. Fujishima, Y. Tokura, M. Abbate, F. M. F. de Groot, M. T. Czyzy, J. C. Fuggle, O. Strebel, F. Lopez, M. Domke, and G. Kaindl, Phys. Rev. B 46, 9841 (1992). 10.1103/PhysRevB.46.9841
26. M. Sing, M. Karlsson, D. Schrupp, R. Claessen, M. Heinrich, V. Fritsch, H.-A. Krug von Nidda, A. Loidl, and R. Bulla, e-print arXiv:cond-mat/0205067v1 [cond-mat.str-el].
27. A. Fujimori, T. Yoshida, K. Okazaki, T. Tsujioka, K. Kobayashi, T. Mizokawa, M. Onada, T. Katsufuji, Y. Taguchi, and Y. Tokura, J. Electron Spectrosc. Relat. Phenom. 117-118, 277 (2001). 10.1016/S0368-2048(01)00253-5
28. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface. Anal. 21, 165 (1994). 10.1002/sia.740210302
29. S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface. Anal. 43, 689 (2011). 10.1002/sia.3522
30. J. Hwang, J. Y. Zhang, J. Son, and S. Stemmer, Appl. Phys. Lett. 100, 191909 (2012). 10.1063/1.4714734