Photoelectrochemical conversion in a WO3 coated p-Si photoelectrode: Effect of annealing temperature

Journal of Applied Physics

Volumn 81, Issue 10, 1997, Pages 7024-7029

  Yoon, Ki Hyun ^a   Shin, Choul Woo ^a   Kang, Dong Heon ^a,b  

^a Yonsei University   (South Korea)

^b Suwon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ENERGY GAP; OXIDES; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; THERMAL EFFECTS; X RAY DIFFRACTION;

DEPLETION LAYER WIDTH; ELECTRON BEAM EVAPORATION; FLATBAND POTENTIAL; PHOTOELECTROCHEMICAL PROPERTIES; TUNGSTEN OXIDE;

ELECTROCHEMICAL ELECTRODES;

EID: 0031146502     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365268     Document Type: Article

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