E-mode planar Lg = 35 nm In0.7Ga0.3As MOSFETs with InP/Al2O3/HfO2 (EOT = 0.8 nm) composite insulator

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Kim, D H ^a   Hundal, P ^a   Papavasiliou, A ^a   Chen, P ^a   King, C ^a   Paniagua, J ^a   Urteaga, M ^a   Brar, B ^a   Kim, Y G ^b   Kuo, J M ^c   Li, J ^c   Pinsukanjana, P ^c   Kao, Y C ^c  

^a TELEDYNE SCIENTIFIC COMPANY   (United States)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c IntelliEPI   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITE INSULATORS; GATE INSULATOR; HYSTERESIS BEHAVIOR; III-V MOSFETS; INGAAS MOSFET; INP; MOSFETS;

DISPLAY DEVICES; ELECTRON DEVICES; HAFNIUM OXIDES; SEMICONDUCTING INDIUM;

MOSFET DEVICES;

EID: 84876100133     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479150     Document Type: Conference Paper

References (11)

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