Oxide-relief and Zn-diffusion 850-nm vertical-cavity surface-emitting lasers with extremely low energy-to-data-rate ratios for 40 Gbit/s operations

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 19, Issue 2, 2013, Pages

  Shi, Jin Wei ^a   Yan, Jhih Cheng ^a   Wun, Jhih Min ^a   Chen, Jason ^b   Yang, Ying Jay ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Semiconductor lasers; vertical cavity surface emitting lasers (VCSELs)

Indexed keywords

BIT-RATE TRANSMISSION; DIFFERENTIAL RESISTANCES; ELECTRICAL-TO-OPTICAL; ERROR FREE TRANSMISSION; HIGH-SPEED OPERATION; LOW-POWER CONSUMPTION; ULTRA-LOW POWER CONSUMPTION; VERTICAL-CAVITY SURFACE EMITTING LASER;

BANDWIDTH; MICROOPTICS; MULTIMODE FIBERS; OPTICAL WAVEGUIDES; SEMICONDUCTOR LASERS; ZINC;

SURFACE EMITTING LASERS;

EID: 84875967709     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2012.2210863     Document Type: Article

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