Active region design for high-speed 850-nm VCSELs

IEEE Journal of Quantum Electronics

Volumn 46, Issue 4, 2010, Pages 506-512

  Healy, Sorcha B ^a   O'Reilly, Eoin P ^a,b   Gustavsson, Johan S ^c   Westbergh, Petter ^c   Haglund, Åsa ^c   Larsson, Anders ^c   Joel, Andrew ^d  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d IQE INC   (United States)

Author keywords

Differential gain; High speed; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ACTIVE REGIONS; DATA-COMMUNICATION; DIFFERENTIAL GAIN; GAAS/ALGAAS; HIGH-CAPACITY; HIGH-SPEED; INGAAS QW; INGAAS/ALGAAS; MODULATION BANDWIDTH; MODULATION RESPONSE; QUANTUM WELL; SHORT-WAVELENGTH; VERTICAL-CAVITY SURFACE EMITTING LASER;

EXTRATERRESTRIAL ATMOSPHERES; LASERS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SPEED;

SURFACE EMITTING LASERS;

EID: 77249131247     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2038176     Document Type: Article

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