Preparation of Cu(In,Ga)S2 thin film for photovoltaic application by annealing of electrodeposited Cu-Ga-S precursor from alcohol solution

Journal of the Electrochemical Society

Volumn 160, Issue 4, 2013, Pages

  Li, Mingwei ^a   Yang, Sui ^a   Li, Hongxing ^a   Yi, Jie ^a   Lv, Xinxin ^a   Wang, Minghao ^a   Zhong, Jianxin ^a  

^a XIANGTAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION METHODS; DEPOSITION POTENTIAL; INDIUM TIN OXIDE SUBSTRATES; ONE-STEP ELECTRODEPOSITIONS; P TYPE SEMICONDUCTOR; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC DEVICES; THERMAL ANNEALING TREATMENT;

DEPOSITION; ELECTRODEPOSITION; GALLIUM; OPTICAL PROPERTIES; SEMICONDUCTOR DEVICES; THIN FILMS; TIN OXIDES; VAPOR DEPOSITION;

GALLIUM ALLOYS;

EID: 84875698627     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/2.079304jes     Document Type: Article

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