Cu(In1-xGax)Si thin films prepared by sulfurization of precursors consisting of metallic and gallium sulfide layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6530-6534

  Ohashi, Tsuyoshi ^a   Wakamori, Masaki ^a   Hashimoto, Yoshio ^a   Ito, Kentaro ^a  

^a SHINSHU UNIVERSITY   (Japan)

Author keywords

Cu(In1 xGax)S2; Cu In GaS precursor; Sulfurization; Thin film; Thin film solar cell

Indexed keywords

ADHESION; ANNEALING; COMPOSITION EFFECTS; DEPOSITION; ENERGY GAP; GLASS; HYDROGEN SULFIDE; LIGHT MEASUREMENT; LIGHT TRANSMISSION; SEMICONDUCTING INDIUM COMPOUNDS; SOLAR CELLS; THIN FILM DEVICES;

SODA LIME GLASS; SULFURIZATION;

SEMICONDUCTING FILMS;

EID: 0032290813     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6530     Document Type: Article

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