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Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

Band edge optical transitions in dilute-nitride GaNSb

(7) Wang, D a Svensson, S P b Shterengas, L a Belenky, G a Kim, C S c Vurgaftman, I c Meyer, J R c

a Stony Brook University (United States)

b U S ARMY RESEARCH LABORATORY (United States)

c NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND GAP REDUCTION; BULK MATERIALS; CARRIER RELAXATION; DILUTE-NITRIDE; FUNCTIONAL DEPENDENCE; HALL MEASUREMENTS; NITROGEN INCORPORATION; OPTICAL ABSORPTION MEASUREMENT; PICOSECOND RANGE; PL SPECTRA; ROOM TEMPERATURE; ULTRA-FAST; UP-CONVERSION TECHNIQUE;

ABSORPTION; CRYSTAL GROWTH; GALLIUM ALLOYS; HOLE MOBILITY; LIGHT ABSORPTION; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTICAL TRANSITIONS;

NITROGEN;

EID: 67649766774 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3055273 Document Type: Article

Times cited : (32)

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