Investigation of electrical and dielectric properties of antimony oxide (Sb2O4) semiconductor thin films for TCO and optoelectronic applications

Journal of Non-Crystalline Solids

Volumn 367, Issue 1, 2013, Pages 1-7

  Ouni, B ^a   Haj Lakhdar, M ^a   Boughalmi, R ^a   Larbi, T ^a   Boukhachem, A ^a   Madani, A ^b,c   Boubaker, K ^a   Amlouk, M ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b UMM AL QURA UNIVERSITY   (Saudi Arabia)

^c University of Carthage   (Tunisia)

Author keywords

Dielectric properties; Impedance spectroscopy; Opto thermal investigation; Sb2O4; Thin films

Indexed keywords

AC AND DC CONDUCTIVITIES; AC CONDUCTIVITY; ANTIMONY OXIDES; BAND TAIL; BARRIER HEIGHTS; CAPACITIVE ELEMENTS; COMPLEX IMPEDANCE; CORRELATED BARRIER HOPPING; DC CONDUCTIVITY; DEFECT STATE; ELECTRICAL AND DIELECTRIC PROPERTIES; ELECTRICAL CONDUCTIVITY; EXPERIMENTAL DATUM; FREQUENCY RANGES; IMPEDANCE MEASUREMENT; IMPEDANCE SPECTROSCOPY; OPTICAL INVESTIGATION; OPTO-THERMAL INVESTIGATION; OPTOELECTRONIC APPLICATIONS; POTENTIAL BARRIERS; RELAXATION FREQUENCY; SEMICONDUCTOR THIN FILMS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

ACTIVATION ENERGY; ELECTRIC CONDUCTIVITY; SPECTROSCOPY; THIN FILMS;

DIELECTRIC PROPERTIES;

EID: 84874785484     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2013.02.006     Document Type: Article

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