Effects of bismuth doping on the thermoelectric properties of Cu 3SbSe4 at moderate temperatures

Journal of Alloys and Compounds

Volumn 561, Issue , 2013, Pages 105-108

  Li, X Y ^a   Li, D ^a   Xin, H X ^a   Zhang, J ^a   Song, C J ^a   Qin, X Y ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

Intermetallics; Solid state reactions; Thermoelectric; X ray diffraction

Indexed keywords

ANTIMONY COMPOUNDS; BISMUTH; COPPER COMPOUNDS; HOLE CONCENTRATION; INTERMETALLICS; SINTERING; SOLID STATE REACTIONS; SPARK PLASMA SINTERING; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; X RAY DIFFRACTION;

BISMUTH DOPING; BISMUTH-DOPED; EFFECTIVE MASS; MELTING METHOD; MODERATE TEMPERATURE; TEMPERATURE RANGE; THERMOELECTRIC; THERMOELECTRIC PROPERTIES;

BISMUTH COMPOUNDS;

EID: 84874440885     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.01.131     Document Type: Article

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