A wide-band-gap p -type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

Applied Physics Letters

Volumn 94, Issue 20, 2009, Pages

  Liu, Min Ling ^a   Huang, Fu Qiang ^a   Chen, Li Dong ^a   Chen, I Wei ^b  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDLIKE STRUCTURES; ELECTRICAL CONDUCTIVITY; FIGURE OF MERIT; LATTICE THERMAL CONDUCTIVITY; P-TYPE; PARTIAL SUBSTITUTION; POWER FACTORS; THERMOELECTRIC MATERIAL; WIDE BAND GAP;

ELECTRIC CONDUCTIVITY; ELECTRIC POWER FACTOR; HIGH TEMPERATURE APPLICATIONS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN; ZINC;

CHALCOGENIDES;

EID: 65949104062     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130718     Document Type: Article

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