Thermoelectric properties of CuSbSe2 and its doped compounds by Ti and Pb at low temperatures from 5 to 310 K

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Li, D ^a   Qin, X Y ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC RESISTANCE; LEAD; PHONONS; SEMICONDUCTOR DOPING; THERMOELECTRICITY; TITANIUM;

CUSBSE2; DC RESISTIVITY; PHONON SCATTERING;

COPPER COMPOUNDS;

EID: 33746794558     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218592     Document Type: Article

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