Polarization induced hole doping in graded AlxGa 1-xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Li, Shibin ^a   Zhang, Ting ^a   Wu, Jiang ^a   Yang, Yajie ^a   Wang, Zhiming ^a   Wu, Zhiming ^a   Chen, Zhi ^a   Jiang, Yadong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; HIGH AL; HOLE CHARGE; INDUCED HOLES; N LAYERS; P-TYPE DOPING; POLARIZATION DOPING;

ALKALINE EARTH METALS; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM; MOLECULAR BEAM EPITAXY; POLARIZATION;

ALUMINUM;

EID: 84874251573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792685     Document Type: Article

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