GaN-based multi-junction diode with low reverse leakage current using p-type barrier controlling layer

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Shibata, Daisuke ^a   Kaibara, Kazuhiro ^a   Murata, Tomohiro ^a   Yamada, Yasuhiro ^a   Morita, Tatsuo ^a   Anda, Yoshiharu ^a   Ishida, Masahiro ^a   Ishida, Hidetoshi ^a   Ueda, Tetsuzo ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; DEPLETION LAYER; FORWARD CURRENTS; GATE INJECTION; HIGH CONVERSION EFFICIENCY; HIGH-VOLTAGE OPERATION; MULTI-JUNCTIONS; OUTPUT VOLTAGES; P-TYPE; POTENTIAL BARRIERS; POWER SWITCHING; REVERSE LEAKAGE CURRENT; TUNNELING CURRENT;

DIODES; ELECTRON DEVICES; GALLIUM ALLOYS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

GALLIUM NITRIDE;

EID: 84863069312     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131616     Document Type: Conference Paper

References (8)

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