Development of a boost converter for PV systems based on SiC BJTs

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Volumn , Issue , 2011, Pages

  Hensel, A ^a   Wilhelm, C ^a   Kranzer, D ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Bipolar Junction Transistor (BJT); Converter circuit; Device application; Device characterisation; Efficiency; High power density systems; Photovoltaics; Power semiconductor device; Renewable energy systems; Silicon Carbide (SiC); Wide bandgab devices

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; CONVERTER CIRCUITS; DEVICE APPLICATION; DEVICE CHARACTERISATION; HIGH POWER DENSITY SYSTEMS; PHOTOVOLTAICS; POWER SEMICONDUCTOR DEVICES; RENEWABLE ENERGY SYSTEMS; WIDE BANDGAB DEVICES;

BIPOLAR TRANSISTORS; DC-DC CONVERTERS; EFFICIENCY; EQUIPMENT; PHOTOVOLTAIC EFFECTS; POWER ELECTRONICS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; TRANSISTORS; TUNNEL DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80053508766     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. BALIGA, B.J.: Fundamentals of Power Semiconductor Devices. Springer, Berlin, 2008
2. CHOW, T.P.; KHEMKA, V.; FEDISON, J.: SiC and GaN Bipolar Power Devices. In: Solid-State Electronics 44 (2000), pp. 277-301
3. KRANZER, D.; WILHELM, C.; BURGER, F. Reiners; B.: Application of normally-off SiC-JFETs in photovoltaic inverters. In: Power Electronics and Applications, 2009
4. QUAY, Dr. R.; HULL R, etc. (Hrsg.): Gallium Nitride Electronics. Springer, Berlin, 2008
5. TranSiC AB: BitSiC1206 - 1st Generation BitSiC Silicon Carbide NPN Power Bipolar Junction Transisor. Datasheet, 2008. http://www.transic.com