Can cation vacancy defects induce room temperature ferromagnetism in GaN?

Applied Physics Letters

Volumn 102, Issue 6, 2013, Pages

  Wang, Xiaopeng ^a   Zhao, Mingwen ^a   He, Tao ^b   Wang, Zhenhai ^a   Liu, Xiangdong ^a  

^a SHANDONG UNIVERSITY   (China)

^b SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CATION VACANCIES; EXCHANGE-CORRELATION FUNCTIONALS; GALLIUM NITRIDES (GAN); HIGH THERMAL CONDUCTIVITY; ROOM TEMPERATURE FERROMAGNETISM; RT FERROMAGNETISM; WIDE BAND GAP;

FERROMAGNETISM; GALLIUM NITRIDE; VACANCIES;

THERMAL CONDUCTIVITY;

EID: 84874235036     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792528     Document Type: Article

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