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Volumn 154-155, Issue 1-3, 2008, Pages 187-192

Challenges for ab initio defect modeling

Author keywords

Charge correction; Defects; Gap correction; Semiconductor; Theory

Indexed keywords

CALCULATIONS; DEFECT DENSITY; DEFECT ENGINEERING; DENSITY FUNCTIONAL THEORY; GROUND STATE;

EID: 56949084164     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.10.024     Document Type: Article
Times cited : (20)

References (42)
  • 2
    • 85166377631 scopus 로고    scopus 로고
    • Scaling the energy difference between defect level and the VB edge with the theoretical-to-experimental gap ratio, is even less founded, and works almost only accidentally.
    • Scaling the energy difference between defect level and the VB edge with the theoretical-to-experimental gap ratio, is even less founded, and works almost only accidentally.
  • 24
    • 85166369292 scopus 로고    scopus 로고
    • E.R. Batista, et al., Phys. Rev. B 74 (2006) 121102(R).
    • E.R. Batista, et al., Phys. Rev. B 74 (2006) 121102(R).
  • 30
    • 85166368058 scopus 로고    scopus 로고
    • More precisely, these calculations should be termed G0W0, due to the approximations necessary for application to large supercells [11].
    • More precisely, these calculations should be termed G0W0, due to the approximations necessary for application to large supercells [11].
  • 41
    • 85166364820 scopus 로고    scopus 로고
    • P. Deák, T. Frauenheim, A. Gali, C.S. Harris, M. Arbab, unpublished.
    • P. Deák, T. Frauenheim, A. Gali, C.S. Harris, M. Arbab, unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.