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Volumn 600-603, Issue , 2009, Pages 691-694
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High channel mobility of MOSFET fabricated on 4H-SiC (11-20) face using wet annealing
a
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Author keywords
(11 20) face; Channel mobility; Hydrogen passivation; Interface states; MOSFET; Thermal desorption spectroscopy; Wet annealing; Wet oxidation
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Indexed keywords
HYDROGEN;
INTERFACE STATES;
MOSFET DEVICES;
PASSIVATION;
SECONDARY ION MASS SPECTROMETRY;
SILICON CARBIDE;
THERMAL DESORPTION;
THERMAL DESORPTION SPECTROSCOPY;
(11-20) FACE;
ANNEALING PROCESS;
CHANNEL MOBILITY;
HYDROGEN PASSIVATION;
INTERFACES STATE;
MOS-FET;
MOSFETS;
THERMAL-DESORPTION SPECTROSCOPY;
WET ANNEALING;
WET OXIDATION;
ANNEALING;
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EID: 63849162465
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.600-603.691 Document Type: Conference Paper |
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Times cited : (25)
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References (6)
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