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Journal of Applied Physics

Volumn 113, Issue 4, 2013, Pages

Improved passivation of the ZnO/Si interface by pulsed laser deposition

(4) Gluba, M A a Nickel, N H a Hinrichs, K b Rappich, J a

a HAHN MEITNER INSTITUT (Germany)

b LEIBNIZ INSTITUT FÜR ANALYTISCHE WISSENSCHAFTEN ISAS E V (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; DEGREE OF DISORDER; INFRARED SPECTROSCOPIC ELLIPSOMETRY; INTERFACE DEFECTS; INTERFACE PROPERTY; RAMAN BACKSCATTERING; STRUCTURAL QUALITIES; ZNO;

DEFECT DENSITY; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; ZINC OXIDE;

PULSED LASER DEPOSITION;

EID: 84873686532 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4788675 Document Type: Article

Times cited : (16)

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