Electrochemical fabrication and characterization of porous silicon/polypyrrole composites and chemical sensing of organic vapors

International Journal of Electrochemical Science

Volumn 8, Issue 2, 2013, Pages 1559-1572

  Dian, Juraj ^a   Konečný, Martin ^a   Broncová, Gabriela ^b   Kronďák, Martin ^b,c   Matolínová, Iva ^a  

^a CHARLES UNIVERSITY   (Czech Republic)

^b INSTITUTE OF CHEMICAL TECHNOLOGY   (Czech Republic)

^c Integrity and Technical Engineering   (Czech Republic)

Author keywords

Electropolymerization; Photoluminescence; Polypyrrole; Porous silicon; Scanning electron microscopy

Indexed keywords

EID: 84873563992     PISSN: None     EISSN: 14523981     Source Type: Journal    
DOI: None     Document Type: Article

References (31)

1. M.J. Sailor, Properties of Porous Silicon, INSPEC, London (1997).
2. S.E. Letant, M.J. Sailor, Adv. Mater., 12 (2000) 355.
3. I. Schechter, M. Ben-Chorin and A. Kux, Anal. Chem., 64 (1995) 3727
4. HM. Martinez, N.E. Rincon, J. Torres and J.E. Alfonso, Microelectron. J. 39 (2008) 1354.
5. M. Bjorkqvist, J. Paski, J. Salonen and V.P. Lehto, phys. stat. sol. (a), 202 (2005) 1653.
6. S.J. Kim, B.H. Jeon, K.S. Choi and N.K. Min, J. Solid State Electrochem., 4 (2000) 363.
7. H. Arwin, G. Wang, and R. Jansson, phys. stat. sol. (a), 197 (2003) 518.
8. J.M. Lauerhaas, G.M. Credo, J.L. Heinrich, M.J. Sailor, J. Am. Chem. Soc. 114 (1992) 1911.
9. K.P.S. Dancil, D.P. Greiner and M.J. Sailor, J. Am. Chem. Soc., 121 (1999) 7925.
10. P. Granitzer and K. Rumpf, Materials, 3 (2010) 943.
11. V.P. Parkhutik, R. Diaz Galleja, E.S. Matveeva, J.M. Martinez-Duart, Synth. Met., 67 (1994) 111.
12. J.D. Moreno, M.L. Marcos, F. Agullo-Rueda, R. Guerrero-Lemus, R.J. Martin-Palma, J.M. Martinez-Duart, J. Gonzales-Velasco, Thin Solid Films, 348 (1999) 152.
13. Y.Q. Shen, Synth. Met., 98 (1998) 147.
14. G. Inzelt, Conducting Polymers - A New Era in Electrochemistry, 2nd Edition, Springer-Verlag, Berlin (2012).
15. T.P. Nguyen, P. Le Rendu, V.H. Tran, V. Parkhutik and R. Fenollosa Esteve, J. Porous Mat., 7 (2000) 393.
16. F.A. Harraz, J. Electrochem. Soc., 153 (2006) C349.
17. G.C. Cheng, J.N. Ding, Z.Q. Zhang, Z.Y. Ling, H.S. Pu, Surf. Interface Anal., 44 (2012) 844.
18. F.A. Harraz, M.S. Salem, T. Sakka and Y.H. Ogata, Electrochim. Acta, 53 (2008) 3734.
19. R.K. Sharma, A.C. Rastogi, S.B. Desu, Physica B, 388 (2007) 344.
20. C. Popa, R. Turcu, I. Craciunescu, A. Nan, M.L. Ciurea, I. Stavarache, V. Iancu, J. Optoelectron. Adv. Mater., 10 (2008) 2319.
21. J.H. Jin, E.C. Alocilja, D.L. Grooms, J. Porous. Mat., 17 (2010) 169.
22. S. Fellah, R.B. Wehrspohn, N. Gabouze, F. Ozanam, J.N. Chazalviel, J. Luminesc., 80 (1999) 109.
23. V. Vrkoslav, I. Jelínek, G. Broncová, V. Král and J. Dian, Mat. Sci. Eng. C, 26 (2006) 1072.
24. J. Dian, V. Vrkoslav and I. Jelinek, Sensors Actuat. B-Chem., 147 (2010) 406.
25. F.A. Harraz, phys. stat. sol. (c), 8 (2011) 1883.
26. M. Omastova, M. Trchova, J. Kovarova and J. Stejskal, Synth. Met., 138 (2003) 447.
27. L. Canham, Properties of Porous Silicon, INSPEC, London (1997).
28. T. Chvojka, V. Vrkoslav, I. Jelínek, J. Jindrich, M. Lorenc, J. Dian, Sensors Actuat. B-Chem., 100 (2004) 246.
29. L.R. Snyder, J. Chromatography A, 92 (1974) 223.
30. S. Hara, T. Zama, W. Takashima, K. Kaneto, J. Mater. Chem., 14 (2004) 1516.
31. J.M. Sansinena, V. Olazabal, T.F. Otero, C.N. Polo da Fonseca and M.-A. De Paoli, Chem. Commun., (1997) 2217.