Scaling of copper seed layer thickness using plasma-enhanced ALD and optimized precursors

IEEE Transactions on Semiconductor Manufacturing

Volumn 26, Issue 1, 2013, Pages 17-22

  Mao, Jiajun ^a   Eisenbraun, Eric ^a   Omarjee, Vincent ^b   Korolev, Andrey ^b   Dussarrat, Christian ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Delaware Research and Technology Center   (United States)

Author keywords

AbaCus; BEOL; copper; plasma enhanced atomic layer deposition (PEALD); super AbaCus

Indexed keywords

ABACUS; BEOL; COPPER DEPOSITION; COPPER SEED; FILM ADHESION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PROCESS WINDOW; SUPER ABACUS; ULTRA LOW TEMPERATURES;

COPPER; MATHEMATICAL INSTRUMENTS;

ATOMIC LAYER DEPOSITION;

EID: 84873345725     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2012.2220789     Document Type: Article

References (7)

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