Copper-ALD seed layer as an enabler for device scaling

ECS Transactions

Volumn 41, Issue 2, 2011, Pages 33-39

  Mao, J ^a   Eisenbraun, E ^a   Omarjee, V ^b   Korolev, A ^b   Dussarrat, C ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b AIR LIQUIDE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COPPER;

COPPER PRECURSORS; COPPER SEED; DEVICE-SCALING; FILM PROPERTIES; HIGH POTENTIAL; INTERCONNECT TECHNOLOGY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SEED LAYER;

ATOMIC LAYER DEPOSITION;

EID: 84857344468     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3633652     Document Type: Conference Paper

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