Multiwafer zinc diffusion in an OMVPE reactor

Journal of Crystal Growth

Volumn 352, Issue 1, 2012, Pages 249-252

  Pitts, O J ^a   Benyon, W ^a   Goodchild, D ^a   Springthorpe, A J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A1. Diffusion; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Organometallic vapor phase epitaxy; B2. Semiconducting indium phosphide

Indexed keywords

DIFFUSION DEPTH; DIFFUSION PROFILES; DIFFUSION TEMPERATURE; DIFFUSION TIME; DIMETHYLZINC; ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING; INP; ORGANOMETALLIC VAPOR PHASE EPITAXY; PLANAR DEVICES; ZINC DIFFUSION;

EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; VAPORS; ZINC;

DIFFUSION;

EID: 84863304622     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.10.006     Document Type: Conference Paper

References (10)

1. B. Tuck, and A. Hooper Journal of Physics D 8 1975 1806
2. G.J. van Gurp Journal of Applied Physics 61 5 1987 1846
3. C.A. Hampel Journal of Vacuum Science and Technology A 22 3 2004 916
4. D. Franke Journal of Crystal Growth 195 1998 112
5. A. van Geelen Journal of Crystal Growth 195 1998 79
6. G.J. van Gurp Journal of Applied Physics 65 2 1988 553
7. W.C. Dautremont-Smith, J. Lopata, S.J. Pearton, L.A. Koszi, M. Stavola, and V. Swaminathan Journal of Applied Physics 66 1989 1993
8. J. Chevallier, A. Jalil, B. Theys, J.C. Pesant, M. Aucouturier, B. Rose, and A. Mircea Semiconductor Science and Technology 4 1989 87
9. J. Wisser, M. Glade, H.J. Scmidt, and K. Heime Journal of Applied Physics 71 7 1992 3234
10. O. Kayser, R. Westphalen, B. Opitz, and P. Balk Journal of Crystal Growth 112 1991 111