Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface

Surface Science

Volumn 609, Issue , 2013, Pages 147-151

  Ye, Wei ^a,b   Min, Kyoungmin ^a   Peña Martin, Pamela ^b   Rockett, Angus A ^b   Aluru, N R ^a   Lyding, Joseph W ^a,b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Dangling bond wire; Density functional calculations; Hydrogen passivated silicon; Scanning tunneling spectroscopy; Si(100) surface; Silicon dangling bond; UHV STM

Indexed keywords

DANGLING-BOND WIRES; SCANNING TUNNELING SPECTROSCOPY; SI(100) SURFACE; SILICON DANGLING BOND; UHV-STM;

DANGLING BONDS; ELECTRONIC PROPERTIES; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTROSCOPY; WIRE;

DENSITY FUNCTIONAL THEORY;

EID: 84873055429     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2012.11.015     Document Type: Article

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