Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 340-345

  Hitosugi, Taro ^a   Hashizume, T ^a   Heike, S ^a   Kajiyama, H ^a   Wada, Y ^a   Watanabe, S ^a   Hasegawa, T ^a   Kitazawa, K ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; ENERGY GAP; FERMI LEVEL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

ATOMIC WIRE; SCANNING TUNNELING SPECTROSCOPY (STS);

WIRE;

EID: 0032094674     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00081-6     Document Type: Article

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