Mechanism of single atom switch on silicon

Surface Science

Volumn 415, Issue 3, 1998, Pages

  Quaade, U J ^a   Stokbro, K ^a   Thirstrup, C ^b   Grey, F ^a  

^a TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^b RIKEN   (Japan)

Author keywords

Ab initio chemical methods and calculations; Atomistic dynamics; Density functional calculations; Hydrogen; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface diffusion

Indexed keywords

ATOMS; CALCULATIONS; DIFFUSION; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SILICON; SWITCHING;

AB INITIO CHEMICAL METHOD; ATOMISTIC DYNAMICS; DENSITY FUNCTIONAL CALCULATIONS; ELECTRONIC EXCITATION; LOW INDEX SINGLE CRYSTAL SURFACES; SINGLE ATOM SWITCH;

SURFACES;

EID: 0032500418     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00560-3     Document Type: Article

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