Concentration quenching and thermal activation of the luminescence from terbium-doped a -SiC: H and c -AlN thin films

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 10, Issue 1, 2013, Pages 68-71

  Guerra, J Andres ^a,b   Benz, Felix ^c   Zanatta, A Ricardo ^d   Strunk, Horst P ^c   Winnacker, Albrecht ^b   Weingärtner, Roland ^a  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ   (Peru)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c UNIVERSITY OF STUTTGART   (Germany)

^d UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Concentration quenching; Terbium; Thermal activation

Indexed keywords

ALN; ALN THIN FILMS; ANNEALING PROCESS; ANNEALING TEMPERATURES; ATOMIC CONCENTRATION; CONCENTRATION QUENCHING; CONCENTRATION RANGES; CRYSTALLINE ALUMINUM; EXPONENTIAL DECAYS; HIGH-CONCENTRATION REGIONS; HOST MATERIALS; HYDROGENATED SILICON CARBIDE; LOW CONCENTRATIONS; RF MAGNETRON REACTIVE SPUTTERING; THERMAL ACTIVATION;

ACTIVATION ENERGY; ALUMINUM NITRIDE; ANNEALING; ARRHENIUS PLOTS; QUENCHING; SILICON CARBIDE; THIN FILMS;

TERBIUM;

EID: 84872904577     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201200394     Document Type: Article

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