Bandgap engineering of the amorphous wide bandgap semiconductor (SiC) 1-x(AlN)x doped with terbium and its optical emission properties

Materials Science and Engineering: B

Volumn 174, Issue 1-3, 2010, Pages 114-118

  Weingartner R ^a,b   Guerra Torres, J A ^a   Erlenbach, O ^a,b   Galvez De La Puente G ^a,b   De Zela, F ^a   Winnacker, A ^b  

^a PONTIFICIA UNIVERSIDAD CATÓLICA DEL PERÚ   (Peru)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Aluminum nitride; Optical properties; Rare earths; Silicon carbide; Thin films

Indexed keywords

AMORPHOUS FILMS; CALCIUM FLUORIDE; ENERGY GAP; FLUORSPAR; GLASS SUBSTRATES; III-V SEMICONDUCTORS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; RARE EARTHS; SILICON CARBIDE; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

BAND GAP ENGINEERING; EMISSION PROPERTIES; OPTICAL EMISSIONS; PSEUDOBINARY COMPOUNDS; R.F. MAGNETRON SPUTTERING; RARE-EARTHS; RF-MAGNETRON SPUTTERING; SEMICONDUCTORS THIN FILMS; THIN-FILMS; WIDE-BAND-GAP SEMICONDUCTOR;

ALUMINUM NITRIDE;

EID: 77956472774     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2010.03.033     Document Type: Conference Paper

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