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Volumn 10, Issue 1, 2013, Pages 109-112
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How to describe concentration quenching in rare earth doped semiconductors
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Author keywords
Concentration quenching; Rare earth; Rate equations; Simulation; Terbium
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Indexed keywords
CONCENTRATION QUENCHING;
CONCENTRATION QUENCHING EFFECT;
MEAN VALUES;
MICROSTRUCTURAL INFLUENCES;
MONTE CARLO SIMULATION;
RARE EARTH DOPED;
RARE EARTH IONS;
RATE EQUATIONS;
SIMULATION;
TRANSITION PROBABILITIES;
ALUMINUM;
ALUMINUM NITRIDE;
INTELLIGENT SYSTEMS;
METAL IONS;
NITRIDES;
RARE EARTHS;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
TERBIUM;
QUENCHING;
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EID: 84872943894
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.201200357 Document Type: Article |
Times cited : (11)
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References (9)
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