Tunable electronic properties of ZnO nanowires and nanotubes under a transverse electric field

Journal of Applied Physics

Volumn 113, Issue 3, 2013, Pages

  Wang, Yanzong ^a,b   Wang, Baolin ^c   Zhang, Qinfang ^c,d,e   Shi, Daning ^a   Yunoki, Seiji ^d,e   Kong, Fanjie ^c   Xu, Ning ^c  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b HUAIYIN INSTITUTE OF TECHNOLOGY   (China)

^c YANCHENG INSTITUTE OF TECHNOLOGY   (China)

^d RIKEN   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON EFFECTIVE MASS; FUTURE APPLICATIONS; NANO-DEVICES; OPTOELECTRONIC MATERIALS; SEMICONDUCTOR-METAL TRANSITION; TRANSVERSE ELECTRIC FIELD; WALL THICKNESS; ZNO NANOSTRUCTURES; ZNO NANOWIRES;

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ENERGY GAP; MICROELECTRONICS; NANOWIRES; OPTOELECTRONIC DEVICES; ZINC OXIDE;

NANOTUBES;

EID: 84872852826     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775767     Document Type: Article

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