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Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

Engineering the band gap of SiC nanotubes with a transverse electric field

(2) Alfieri, G a Kimoto, T a

a KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP WIDTH; BAND GAPS; EMPIRICAL MODEL; FIELD DEPENDENCE; NANOTUBE DIAMETERS; SIC NANOTUBES; TRANSVERSE ELECTRIC FIELD;

ELECTRIC FIELDS; ENERGY GAP; NANOTUBES; SILICON CARBIDE;

DENSITY FUNCTIONAL THEORY;

EID: 77955760133 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3469944 Document Type: Article

Times cited : (40)

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