In situ raman probing of graphene over a broad doping range upon rubidium vapor exposure

ACS Nano

Volumn 7, Issue 1, 2013, Pages 165-173

  Parret, Romain ^a,b   Paillet, Matthieu ^a   Huntzinger, Jean Roch ^a   Nakabayashi, Denise ^a,c   Michel, Thierry ^a   Tiberj, Antoine ^a   Sauvajol, Jean Louis ^a   Zahab, Ahmed A ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b ECOLE NORMALE SUPÉRIEURE   (France)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

alkali; bilayer graphene; charge transfer; doping; graphene; Raman spectroscopy; Rb

Indexed keywords

ADIABATIC EFFECT; ALKALI; BI-LAYER; DIRECT LINKS; DOPING RANGE; ELECTRON CONCENTRATION; G-BAND FREQUENCIES; K POINTS; LATTICE EXPANSION; N-DOPING; PHONON DISPERSIONS; PINNING EFFECTS; RUBIDIUM VAPOR; SINGLE LAYER; SITU RAMAN; SITU RAMAN SCATTERING; THEORETICAL PREDICTION;

ACOUSTIC DISPERSION; CHARGE TRANSFER; DOPING (ADDITIVES); GRAPHENE; RAMAN SPECTROSCOPY; RUBIDIUM; STRAIN MEASUREMENT;

VAPORS;

GRAPHITE; NANOMATERIAL; RUBIDIUM;

ARTICLE; CHEMISTRY; GAS; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; RAMAN SPECTROMETRY; SURFACE PROPERTY; ULTRASTRUCTURE;

GASES; GRAPHITE; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; RUBIDIUM; SPECTRUM ANALYSIS, RAMAN; SURFACE PROPERTIES;

MLCS; MLOWN;

EID: 84872840461     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3048878     Document Type: Article

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