Tunnel-field-effect-transistor based gas-sensor: Introducing gas detection with a quantum-mechanical transducer

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Sarkar, Deblina ^a   Gossner, Harald ^b   Hansch, Walter ^c   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b INTEL CORPORATION   (United States)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; ANALYTICAL AND NUMERICAL MODELS; ANALYTICAL FORMULAS; BAND TO BAND TUNNELING; CURRENT INJECTIONS; DESIGN FLEXIBILITY; DEVICE SIMULATIONS; EFFECTS OF TEMPERATURE; GAS DETECTION; GAS SPECIES; GATE BIAS DEPENDENCE; METAL OXIDE SEMICONDUCTOR; MOSFETS; NONLOCAL; ORGANIC CONDUCTING POLYMERS; PHONON ASSISTED TUNNELING; QUANTUM MECHANICAL; SENSING ELEMENTS; SENSOR PERFORMANCE; STABLE OPERATION; SUBTHRESHOLD SWING; TEMPERATURE VARIATION; TUNNELING PROBABILITIES;

COMPUTER SIMULATION; CONDUCTING POLYMERS; MODULATION; MOSFET DEVICES; SENSORS;

GASES;

EID: 84872745715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775358     Document Type: Article

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