Reverse boundary layer capacitor model in glass/ceramic composites for energy storage applications

Journal of Applied Physics

Volumn 113, Issue 2, 2013, Pages

  Wei, Xiaoyong ^a,b   Yan, Haixue ^a   Wang, Tong ^b   Hu, Qingyuan ^b   Viola, G ^a,c   Grasso, Salvatore ^a,c   Jiang, Qinghui ^a   Jin, Li ^b   Xu, Zhuo ^b   Reece, Michael J ^a,c  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c Nanoforce Technology Limited   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN FIELD; BRICK-WALL MODEL; CAPACITOR MODELS; CERAMIC GRAINS; CONFIGURATION MODEL; ELECTRICAL CONDUCTIVITY; ENERGY DENSITY; ENERGY STORAGE APPLICATIONS; FIELD DISTRIBUTION; FREQUENCY RANGES; GLASS ADDITIVE; GRAIN BOUNDARY CONDUCTIVITY; INSULATING GLASS;

BOUNDARY LAYERS; CAPACITORS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ENERGY STORAGE; GLASS;

GRAIN BOUNDARIES;

EID: 84872731343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4775493     Document Type: Article

References (23)

1. G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Parthasarathy, E. Vincent, and G. Ghibaudo, IEEE Trans. Device Mater. Reliab. 5, 5 (2005). 10.1109/TDMR.2005.845236
2. D. P. Shay, N. J. Podraza, N. J. Donnelly, and C. A. Randall, J. Am. Ceram. Soc. 95, 1348 (2012). 10.1111/j.1551-2916.2011.04962.x
3. Q. Zhang, L. Wang, J. Luo, Q. Tang, and J. Du, Int. J. Appl. Ceram. Technol. 7, E124 (2010) 10.1111/j.1744-7402.2009.02456.x.
4. G. Dong, S. Ma, J. Du, and J. Cui, Ceram. Int. 35, 2069 (2009). 10.1016/j.ceramint.2008.11.003
5. G. Viola, H. Ning, M. J. Reece, R. Wilson, T. M. Correia, P. Weaver, M. G. Cain, and H. Yan, J. Phys. D: Appl. Phys. 45, 355302 (2012). 10.1088/0022-3727/45/35/355302
6. X. H. Hao, J. W. Zhai, and X. Yao, J. Am. Ceram. Soc. 92, 1133 (2009). 10.1111/j.1551-2916.2009.03015.x
7. B. H. Ma, D.-K. Kwon, M. Narayanan, and U. B. Balachandran, J. Mater. Res. 24, 2993 (2009). 10.1557/jmr.2009.0349
8. H. Ogihara, C. A. Randall, and S. Trolier-McKinstry, J. Am. Ceram. Soc. 92, 1719 (2009). 10.1111/j.1551-2916.2009.03104.x
9. B. J. Chu, X. Zhou, K. L. Ren, B. Neese, M. R. Lin, Q. Wang, F. Bauer, and Q. M. Zhang, Science 313, 334 (2006). 10.1126/science.1127798
10. M. Arbatti, X. Shan, and Z. Cheng, Adv. Mater. 19, 1369 (2007). 10.1002/adma.200601996
11. Z. Dang, Y. Shen, and C. W. Nan, Appl. Phys. Lett. 81, 4814 (2002). 10.1063/1.1529085
12. J. Y. Li, L. Zhang, and S. Ducharme, Appl. Phys. Lett. 90, 132901 (2007). 10.1063/1.2716847
13. J. Li, P. Khanchaitit, K. Han, and Q. Wang, Chem. Mater. 22, 5350 (2010). 10.1021/cm101614p
14. V. Tomer and C. A. Randall, J. Appl. Phys. 104, 074106 (2008). 10.1063/1.2990073
15. S. P. Fillery, H. Koerner, L. Drummy, E. Dunkerley, M. F. Durstock, D. F. Schmidt, and R. A. Vaia, ACS Appl. Mater. Interfaces 4, 1388 (2012). 10.1021/am201650g
16. M. J. Pan, E. P. Gorzkowski, B. A. Bender, and C. C. M. Wu, in Proceedings of the. 15th IEEE International Symposium on Applications of Ferroelectrics (2006), p. 25.
17. J. Luo, J. Du, Q. Tang, and C. Mao, IEEE Trans. Electron Devices 55, 3549 (2008). 10.1109/TED.2008.2006541
18. E. P. Gorzkowski, M.-J. Pan, B. Bender, and C. C. M. Wu, J. Electroceram. 18, 269 (2007). 10.1007/s10832-007-9127-1
19. M. J. Reece, C. A. Worrell, G. J. Hill, and R. Morrell, J. Am. Ceram. Soc. 79, 17 (1996). 10.1111/j.1151-2916.1996.tb07875.x
20. X. Wang, Y. Zhang, X. Song, Z. Yuan, T. Ma, Q. Zhang, C. Deng, and T. Liang, J. Eur. Ceram. Soc. 32, 559 (2012). 10.1016/j.jeurceramsoc.2011.09.024
21. K. Chen, Y. Pu, N. Xu, and X. Luo, J. Mater. Sci.: Mater. Electron. 23, 1599 (2012). 10.1007/s10854-012-0635-7
22. W. D. Callister, Jr. and D. G. Rethwisch, Materials Science and Engineering: An Introduction, 8th ed. (Wiley, New York, 2009).
23. N. J. Smith, B. Rangarajan, M. T. Lanagan, and C. G. Pantano, Mater. Lett. 63, 1245 (2009). 10.1016/j.matlet.2009.02.047