High energy density, high temperature capacitors utilizing Mn-doped 0.8CaTiO 3-0.2CaHfO 3 ceramics

Journal of the American Ceramic Society

Volumn 95, Issue 4, 2012, Pages 1348-1355

  Shay, Dennis P ^a   Podraza, Nikolas J ^b   Donnelly, Niall J ^c   Randall, Clive A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c Recapping Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN STRENGTHS; DESIGN RATIONALE; DIELECTRIC LAYER; ELECTRONIC CONDUCTIVITY; ELECTRONICS APPLICATIONS; ENERGY DENSITY; GRAIN SIZE; HIGH BREAKDOWN; HIGH ENERGY DENSITIES; HIGH TEMPERATURE; IMPEDANCE SPECTROSCOPY; INTERNAL ELECTRODES; LARGE BAND; MN-DOPED; RELATIVE PERMITTIVITY; ROOM TEMPERATURE; SINGLE LAYER; SINGLE LAYER CAPACITOR; TEMPERATURE DEPENDENCE; THERMAL COEFFICIENT OF CAPACITANCES;

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ENERGY GAP; MANGANESE; PERMITTIVITY; PLATINUM; POWER ELECTRONICS;

ELECTROLYTIC CAPACITORS;

EID: 84859648477     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2011.04962.x     Document Type: Article

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