Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers

Applied Physics Letters

Volumn 102, Issue 2, 2013, Pages

  Piprek, Joachim ^a   Simon Li, Z M ^b  

^a NUSOD Institute LLC   (United States)

^b Crosslight Software Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN LAYERS; ALGAN/GAN; CONDUCTION BAND EDGE; EFFICIENCY IMPROVEMENT; ELECTRON BARRIER; ELECTRON LEAKAGE; ENERGY RANGES; ENERGY-BAND BENDING; HOLE INJECTION; INGAN/GAN; MULTI-QUANTUM BARRIERS; NUMERICAL DEVICE SIMULATION;

EFFICIENCY; GALLIUM NITRIDE;

LIGHT EMITTING DIODES;

EID: 84872694064     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4776739     Document Type: Article

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