Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 994-996

  Zhang, Yun Yan ^a   Zhu, Xue Liang ^a   Yin, Yi An ^b   Ma, Jun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

Electron blocking layer (EBL); light emitting diode (LED); superlattice (SL)

Indexed keywords

ALGAN; ALGAN/GAN; ELECTRON LEAKAGE; ELECTRON-BLOCKING LAYER (EBL); EMISSION SPECTRUMS; ENERGY-BAND DIAGRAM; HOLE INJECTION; INALN/GAN; INTERNAL QUANTUM EFFICIENCY; PERFORMANCE ENHANCEMENTS;

DIODES; ELECTRONS; EMISSION SPECTROSCOPY; GALLIUM NITRIDE; SUPERLATTICES;

LIGHT EMITTING DIODES;

EID: 84862853383     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2197593     Document Type: Article

References (12)

1. K. Kumakura and N. Kobayashi, "Increased electrical activity of Mg-acceptors in AlxGa1?xN/GaN superlattices," Jpn. J. Appl. Phys, vol. 38, pp. L1012-L1014, Sep. 1999. (Pubitemid 30505498)
2. C.-L. Wang, M.-C. Tsai, J.-R. Gong, W.-T. Liao, P.-Y. Lin, K.-Y. Yen, C.-C. Chang, H.-Y. Lin, and S.-K. Hwang., "Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes," Mater. Sci. Eng., vol. 138, no. 2, pp. 180-183, Mar. 2007. (Pubitemid 46329935)
3. P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, "Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices," Appl. Phys. Lett., vol. 74, no. 24, pp. 3681-3683, Jun. 1999. (Pubitemid 129306611)
4. J. Chen, G. H. Fan, W. Pang, and S. W. Zheng, "Comparison of GaN-based light-emitting diodes by using the AlGaN electron-blocking layer and InAlN electron-blocking layer," Chin. Phys. Lett., vol. 28, no. 12, pp. 128501-1-128501-4, Dec. 2011.
5. T. P. Lu, S. T. Li, K. Zhang, C. Liu, G. W. Xiao, Y. G. Zhou, S. W. Zheng, Y. A. Yin, L. J. Wu, H. L. Wang, and X. D. Yang, "The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer," Chin. Phys. B, vol. 20, no. 9, pp. 098503-1-098503-4, Sep. 2011.
6. H. J. Kim, S. Choi, S.-S. Kim, J.-H. Ryou, P. D. Yoder, R. D. Dupuis, A. M. Fischer, K.W. Sun, and F. A. Ponce, "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes," Appl. Phys. Lett., vol. 96, no. 10, p. 101 102, Mar. 2010.
7. S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett., vol. 96, no. 22, pp. 221105-1-221105-3, May 2010.
8. Y.-K. Kuo, J.-Y. Chang, M.-C. Tsai, and S.-H. Yen, "Advantages of blue InGaN multiple-quantum well light-emitting diodes with In-GaN barriers," Appl. Phys. Lett., vol. 95, no. 1, pp. 011116-011118, Jul. 2009.
9. I. Vurgaftman and J. R. Meyer, "Band parameters for nitrogen-containing semiconductors," J. Appl. Phys., vol. 94, no. 6AIP, pp. 3675-3696, Sep. 2003.
10. S. N. Lee, S. Y. Cho, H. Y. Ryu, J. K. Son, H. S. Paek, T. Sakong, T. Jang, K. K. Choi, K. H. Ha, M. H. Yang, O. H. Nam, and Y. Park, "Highpower GaN-based blue-violet laser diodes with AlGaN/GaN multiquantum barriers," Appl. Phys. Lett., vol. 88, no. 11, pp. 11101-1-111101-3, Mar. 2006.
11. E. F. Schubert, W. Grieshaber, and I. D. Goepfert, "Enhancement of deep acceptor activation in semiconductors by superlattice doping," Appl. Phys. Lett., vol. 69, no. 24, pp. 3737-3739, Dec. 1996. (Pubitemid 126620464)
12. P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, "Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices," Appl. Phys. Lett., vol. 74, no. 24, pp. 3681-3683, Jun. 1999. (Pubitemid 129306611)