SCOPUS 정보 검색 플랫폼

Volumn 527, Issue , 2013, Pages 334-337

Electrical property relaxation characteristics of UV-treated ZnO-based thin film transistors

(4) Jin, Sun Moon a Cho, Nam Ihn a Yun, Eui Jung b Nam, Hyoung Gin a

Author keywords

Charge trapping; Keywords; Oxygen vacancy ionization; Secondary ion mass spectrometry; Transparent thin film transistor; Ultraviolet photoelectron spectroscopy; Ultraviolet treatment; X ray photoelectron spectroscopy; Zinc oxide

Indexed keywords

BOTTOM GATE; CHANNEL REGION; DE-TRAPPING; DEEP UV; ELECTRICAL RESPONSE; GATE INSULATOR; INITIAL VALUES; KEYWORDS; OFF-CURRENT; SPECTROSCOPIC CHANGES; SUBTHRESHOLD SWING; TRANSPARENT THIN FILM TRANSISTOR; TRAP CENTER; ULTRAVIOLET TREATMENT; UV ENERGY; UV ILLUMINATIONS; ZNO;

CHARGE TRAPPING; HYDROGEN; OXYGEN VACANCIES; PHOTOELECTRONS; POWER QUALITY; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; THIN FILM TRANSISTORS; THIN FILMS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84872609186 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.11.057 Document Type: Article

Times cited : (2)

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