Effects of interfacial oxide layer in P3HT/n-Si organic/inorganic heterojunction diodes on their carrier transport properties

Microelectronic Engineering

Volumn 104, Issue , 2013, Pages 130-134

  Oyama, Naoki ^a   Kaneko, Sho ^a   Momiyama, Katsuaki ^a   Kanomata, Kensaku ^a   Hirose, Fumihiko ^a  

^a YAMAGATA UNIVERSITY   (Japan)

Author keywords

Heterojunction; Metal insulator semiconductor; Organic inorganic junction; Poly(3 hexylthiophene); Schottky diode; Silicon

Indexed keywords

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; FORWARD CURRENTS; IDEALITY FACTORS; INTERFACIAL OXIDE LAYERS; INTERFACIAL OXIDES; METAL-INSULATOR-SEMICONDUCTORS; ORGANIC/INORGANIC; ORGANIC/INORGANIC HETEROJUNCTIONS; POLY (3-HEXYLTHIOPHENE); SCHOTTKY DIODES; SI LAYER;

CARRIER MOBILITY; MIS DEVICES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SILICON; SILICON CARBIDE; TRANSPORT PROPERTIES;

HETEROJUNCTIONS;

EID: 84872425806     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2012.11.025     Document Type: Article

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