Record high efficiency single-walled carbon nanotube/silicon p - N junction solar cells

Nano Letters

Volumn 13, Issue 1, 2013, Pages 95-99

  Jung, Yeonwoong ^a   Li, Xiaokai ^a   Rajan, Nitin K ^a   Taylor, André D ^a   Reed, Mark A ^a  

^a Yale University   (United States)

Author keywords

CNT Si solar cell; high efficiency; hybrid solar cell; ideality factor; photovoltaics; temperature dependency

Indexed keywords

BAND-TO-BAND TRANSITION; BUILT-IN POTENTIAL; CARRIER SEPARATION; CARRIER TRANSPORT CHARACTERISTICS; FORWARD CURRENTS; HIGH TEMPERATURE PROCESS; HYBRID SOLAR CELLS; IDEALITY FACTORS; INTERFACE RECOMBINATION; MINORITY CARRIER LIFETIMES; P-N HOMOJUNCTIONS; P-N JUNCTION FORMATION; P-TYPE; PHOTOVOLTAICS; SI SOLAR CELLS; SI WAFER; SINGLE-CRYSTALLINE; TEMPERATURE DEPENDENCIES; TEMPERATURE DEPENDENT; THERMALLY ACTIVATED; TRANSPORT MECHANISM; VARYING TEMPERATURE;

EFFICIENCY; SEMICONDUCTOR JUNCTIONS; SILICON; SILICON SOLAR CELLS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

SILICON WAFERS;

EID: 84872106092     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3035652     Document Type: Article

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