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Volumn 107, Issue 4, 2010, Pages

Extraction of poly (3-hexylthiophene) (P3HT) properties from dark current voltage characteristics in a P3HT/ n -crystalline-silicon solar cell

(6) Nolasco, J C a Cabre R a Ferre Borrull J a Marsal, L F a Estrada, M b Pallares J a

a UNIVERSITAT ROVIRA I VIRGILI (Spain)

b DEPARTAMENTO DE FÍSICA (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERISTIC TEMPERATURE; CRYSTALLINE SILICON SOLAR CELLS; DARK CURRENT-VOLTAGE; ELECTRICAL EQUIVALENT CIRCUIT; EXPONENTIAL TRAP DISTRIBUTION; FITTING PARAMETERS; HIGH VOLTAGE; LOCALIZED STATE; LOW VOLTAGES; MEDIUM VOLTAGE; PHYSICAL PARAMETERS; POLY-3-HEXYLTHIOPHENE; REVERSE VOLTAGES; SERIES RESISTANCES; SHUNT RESISTANCES; SPACE-CHARGE LIMITED; TEMPERATURE DEPENDENCE;

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALLINE MATERIALS; ELECTRIC NETWORK ANALYSIS; ELECTRON AFFINITY; SILICON SOLAR CELLS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77749264671 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3296294 Document Type: Article

Times cited : (67)

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