-
1
-
-
83655163685
-
Electric-field-assisted switching in magnetic tunnel junctions
-
10.1038/nmat3171
-
W.-G. Wang, " Electric-field-assisted switching in magnetic tunnel junctions.," Nature Mater. 11, 64-68 (2012). 10.1038/nmat3171
-
(2012)
Nature Mater.
, vol.11
, pp. 64-68
-
-
Wang, W.-G.1
-
2
-
-
83655167100
-
Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
-
10.1038/nmat3172
-
Y. Shiota, " Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses.," Nature Mater. 11, 39-43 (2012). 10.1038/nmat3172
-
(2012)
Nature Mater.
, vol.11
, pp. 39-43
-
-
Shiota, Y.1
-
3
-
-
84866860977
-
Electric field-induced magnetization reversal in a perpendicular- anisotropy CoFeB-MgO magnetic tunnel junction
-
10.1063/1.4753816
-
S. Kanai, " Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.," Appl. Phys. Lett. 101, 122403 (2012). 10.1063/1.4753816
-
(2012)
Appl. Phys. Lett.
, vol.101
, pp. 122403
-
-
Kanai, S.1
-
4
-
-
84876099866
-
Voltage-induced switching of nanoscale magnetic tunnel junctions
-
J. G. Alzate, " Voltage-induced switching of nanoscale magnetic tunnel junctions.," Tech. Dig. IEEE Int. Electron Devices Meet. 2012, 681-684.
-
Tech. Dig. IEEE Int. Electron Devices Meet.
, vol.2012
, pp. 681-684
-
-
Alzate, J.G.1
-
5
-
-
52949096924
-
Surface magnetoelectric effect in ferromagnetic metal films
-
10.1103/PhysRevLett.101.137201
-
C.-G. Duan, " Surface magnetoelectric effect in ferromagnetic metal films.," Phys. Rev. Lett. 101, 137201 (2008). 10.1103/PhysRevLett.101. 137201
-
(2008)
Phys. Rev. Lett.
, vol.101
, pp. 137201
-
-
Duan, C.-G.1
-
6
-
-
62249137762
-
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
-
10.1038/nnano.2008.406
-
T. Maruyama, " Large voltage-induced magnetic anisotropy change in a few atomic layers of iron.," Nat. Nanotechnol. 4, 158-161 (2009). 10.1038/nnano.2008.406
-
(2009)
Nat. Nanotechnol.
, vol.4
, pp. 158-161
-
-
Maruyama, T.1
-
7
-
-
67949114304
-
Voltage-assisted magnetization switching in ultrathin Fe(80)Co(20) alloy layers
-
10.1143/APEX.2.063001
-
Y. Shiota, " Voltage-assisted magnetization switching in ultrathin Fe(80)Co(20) alloy layers.," Appl. Phys. Express 2, 063001 (2009). 10.1143/APEX.2.063001
-
(2009)
Appl. Phys. Express
, vol.2
, pp. 063001
-
-
Shiota, Y.1
-
8
-
-
77953558717
-
Electric field effect on magnetization at the Fe/MgO(001) interface
-
10.1063/1.3443658
-
M. K. Niranjan, " Electric field effect on magnetization at the Fe/MgO(001) interface.," Appl. Phys. Lett. 96, 222504 (2010). 10.1063/1.3443658
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 222504
-
-
Niranjan, M.K.1
-
9
-
-
77956063200
-
Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co(40)Fe(40)B(20)/Ta structures
-
10.1063/1.3429592
-
M. Endo, " Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co(40)Fe(40)B(20)/Ta structures.," Appl. Phys. Lett. 96, 212503 (2010). 10.1063/1.3429592
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 212503
-
-
Endo, M.1
-
10
-
-
77951169630
-
Voltage induced magnetic anisotropy change in ultrathin Fe(80)Co(20)/MgO junctions with Brillouin light scattering
-
10.1063/1.3385732
-
S. S. Ha, " Voltage induced magnetic anisotropy change in ultrathin Fe(80)Co(20)/MgO junctions with Brillouin light scattering.," Appl. Phys. Lett. 96, 142512 (2010). 10.1063/1.3385732
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 142512
-
-
Ha, S.S.1
-
11
-
-
74549119453
-
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
-
10.1063/1.3279157
-
T. Nozaki, " Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions.," Appl. Phys. Lett. 96, 022506 (2010). 10.1063/1.3279157
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 022506
-
-
Nozaki, T.1
-
12
-
-
80051734782
-
Multi-ferroic and magnetoelectric materials and interfaces
-
10.1098/rsta.2010.0344
-
J. P. Velev, " Multi-ferroic and magnetoelectric materials and interfaces.," Philos. Trans. R. Soc. London, Ser. A 369, 3069-3097 (2011). 10.1098/rsta.2010.0344
-
(2011)
Philos. Trans. R. Soc. London, Ser. A
, vol.369
, pp. 3069-3097
-
-
Velev, J.P.1
-
13
-
-
84861661501
-
Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
-
10.1038/nphys2298
-
T. Nozaki, " Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer.," Nat. Phys. 8, 492-497 (2012). 10.1038/nphys2298
-
(2012)
Nat. Phys.
, vol.8
, pp. 492-497
-
-
Nozaki, T.1
-
14
-
-
84858201481
-
Magnetoelectric charge trap memory
-
10.1021/nl204114t
-
U. Bauer, " Magnetoelectric charge trap memory.," Nano Lett. 12, 1437-1442 (2012). 10.1021/nl204114t
-
(2012)
Nano Lett.
, vol.12
, pp. 1437-1442
-
-
Bauer, U.1
-
15
-
-
84861080261
-
Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
-
10.1103/PhysRevLett.108.197203
-
J. Zhu, " Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.," Phys. Rev. Lett. 108, 197203 (2012). 10.1103/PhysRevLett.108. 197203
-
(2012)
Phys. Rev. Lett.
, vol.108
, pp. 197203
-
-
Zhu, J.1
-
16
-
-
85042900060
-
Voltage-controlled magnetic anisotropy in spintronic devices
-
10.1142/S2010324712400024
-
P. Khalili Amiri and K. L. Wang, " Voltage-controlled magnetic anisotropy in spintronic devices.," Spin 2, 1240002 (2012). 10.1142/S2010324712400024
-
(2012)
Spin
, vol.2
, pp. 1240002
-
-
Khalili Amiri, P.1
Wang, K.L.2
-
17
-
-
0030174367
-
Current-driven excitation of magnetic multilayers
-
10.1016/0304-8853(96)00062-5
-
J. C. Slonczewski, " Current-driven excitation of magnetic multilayers.," J. Magn. Magn. Mater. 159, L1-L7 (1996). 10.1016/0304-8853(96)00062-5
-
(1996)
J. Magn. Magn. Mater.
, vol.159
-
-
Slonczewski, J.C.1
-
18
-
-
0001317947
-
Emission of spin waves by a magnetic multilayer traversed by a current
-
10.1103/PhysRevB.54.9353
-
L. Berger, " Emission of spin waves by a magnetic multilayer traversed by a current.," Phys. Rev. B 54, 9353-9358 (1996). 10.1103/PhysRevB.54.9353
-
(1996)
Phys. Rev. B
, vol.54
, pp. 9353-9358
-
-
Berger, L.1
-
19
-
-
0141636577
-
Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars
-
10.1103/PhysRevLett.84.3149
-
J. A. Katine, " Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars.," Phys. Rev. Lett. 84, 3149-3152 (2000). 10.1103/PhysRevLett.84.3149
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 3149-3152
-
-
Katine, J.A.1
-
20
-
-
4043083136
-
Spin-current interaction with a monodomain magnetic body: A model study
-
10.1103/PhysRevB.62.570
-
J. Z. Sun, " Spin-current interaction with a monodomain magnetic body: A model study.," Phys. Rev. B 62, 570-578 (2000). 10.1103/PhysRevB.62.570
-
(2000)
Phys. Rev. B
, vol.62
, pp. 570-578
-
-
Sun, J.Z.1
-
21
-
-
37649033021
-
Thermally assisted magnetization reversal in the presence of a spin-transfer torque
-
10.1103/PhysRevB.69.134416
-
Z. Li and S. Zhang, " Thermally assisted magnetization reversal in the presence of a spin-transfer torque.," Phys. Rev. B 69, 134416 (2004). 10.1103/PhysRevB.69.134416
-
(2004)
Phys. Rev. B
, vol.69
, pp. 134416
-
-
Li, Z.1
Zhang, S.2
-
22
-
-
2442459621
-
Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
-
10.1063/1.1707228
-
Y. M. Huai, " Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions.," Appl. Phys. Lett. 84, 3118-3120 (2004). 10.1063/1.1707228
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 3118-3120
-
-
Huai, Y.M.1
-
23
-
-
77956031280
-
A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
-
10.1038/nmat2804
-
S. Ikeda, " A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.," Nature Mater. 9, 721-724 (2010). 10.1038/nmat2804
-
(2010)
Nature Mater.
, vol.9
, pp. 721-724
-
-
Ikeda, S.1
-
24
-
-
78751486497
-
Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
-
10.1063/1.3536482
-
D. C. Worledge, " Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions.," Appl. Phys. Lett. 98, 022501 (2011). 10.1063/1.3536482
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 022501
-
-
Worledge, D.C.1
-
25
-
-
79952946363
-
Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
-
10.1063/1.3567780
-
P. K. Amiri, " Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions.," Appl. Phys. Lett. 98, 112507 (2011). 10.1063/1.3567780
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 112507
-
-
Amiri, P.K.1
-
26
-
-
84864214488
-
High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
-
10.1021/nn301222v
-
Z. Zeng, " High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy.," ACS Nano 6, 6115-6121 (2012). 10.1021/nn301222v
-
(2012)
ACS Nano
, vol.6
, pp. 6115-6121
-
-
Zeng, Z.1
-
27
-
-
84872087884
-
-
This switching approach is unidirectional for a fixed external magnetic field. Experimentally, however, this can be resolved by allowing for a non-zero current to flow through the device, thus, providing additional current-induced torque
-
This switching approach is unidirectional for a fixed external magnetic field. Experimentally, however, this can be resolved by allowing for a non-zero current to flow through the device, thus, providing additional current-induced torque.
-
-
-
-
28
-
-
39949085230
-
Device implications of spin-transfer torques
-
10.1016/j.jmmm.2007.12.013
-
J. A. Katine and E. E. Fullerton, " Device implications of spin-transfer torques.," J. Magn. Magn. Mater. 320, 1217-1226 (2008). 10.1016/j.jmmm.2007.12.013
-
(2008)
J. Magn. Magn. Mater.
, vol.320
, pp. 1217-1226
-
-
Katine, J.A.1
Fullerton, E.E.2
-
29
-
-
77952871433
-
Advances and future prospects of spin-transfer torque random access memory
-
10.1109/TMAG.2010.2042041
-
E. Chen, " Advances and future prospects of spin-transfer torque random access memory.," IEEE Trans. Magn. 46, 1873-1878 (2010). 10.1109/TMAG.2010.2042041
-
(2010)
IEEE Trans. Magn.
, vol.46
, pp. 1873-1878
-
-
Chen, E.1
-
30
-
-
78651066224
-
Development of embedded STT-MRAM for mobile system-on-chips
-
10.1109/TMAG.2010.2075920
-
K. Lee and S. H. Kang, " Development of embedded STT-MRAM for mobile system-on-chips.," IEEE Trans. Magn. 47, 131-136 (2011). 10.1109/TMAG.2010.2075920
-
(2011)
IEEE Trans. Magn.
, vol.47
, pp. 131-136
-
-
Lee, K.1
Kang, S.H.2
-
31
-
-
84872061400
-
-
Note, however, that the validity of the present analysis does not depend on the sign of the VCMA effect
-
Note, however, that the validity of the present analysis does not depend on the sign of the VCMA effect.
-
-
-
-
32
-
-
77952791735
-
Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation
-
10.1109/TMAG.2010.2041330
-
D. Apalkov, " Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation.," IEEE Trans. Magn. 46, 2240-2243 (2010). 10.1109/TMAG.2010.2041330
-
(2010)
IEEE Trans. Magn.
, vol.46
, pp. 2240-2243
-
-
Apalkov, D.1
-
33
-
-
78650867845
-
Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
-
10.1109/LED.2010.2082487
-
P. K. Amiri, " Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM.," IEEE Electron Device Lett. 32, 57-59 (2011). 10.1109/LED.2010.2082487
-
(2011)
IEEE Electron Device Lett.
, vol.32
, pp. 57-59
-
-
Amiri, P.K.1
|