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Volumn 113, Issue 1, 2013, Pages

Electric-field-induced thermally assisted switching of monodomain magnetic bits

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC-FIELD-INDUCED SWITCHING; EXTERNAL MAGNETIC FIELD; MAGNETIC BITS; MAGNETIC MEMORIES; MONODOMAINS; PERPENDICULAR ANISOTROPY; SINGLE DOMAINS; SWITCHING VOLTAGES; THEORETICAL MODELS; THERMALLY ACTIVATED; VOLTAGE PULSE; VOLTAGE-CONTROLLED;

EID: 84872069339     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773342     Document Type: Article
Times cited : (39)

References (33)
  • 1
    • 83655163685 scopus 로고    scopus 로고
    • Electric-field-assisted switching in magnetic tunnel junctions
    • 10.1038/nmat3171
    • W.-G. Wang, " Electric-field-assisted switching in magnetic tunnel junctions.," Nature Mater. 11, 64-68 (2012). 10.1038/nmat3171
    • (2012) Nature Mater. , vol.11 , pp. 64-68
    • Wang, W.-G.1
  • 2
    • 83655167100 scopus 로고    scopus 로고
    • Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses
    • 10.1038/nmat3172
    • Y. Shiota, " Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses.," Nature Mater. 11, 39-43 (2012). 10.1038/nmat3172
    • (2012) Nature Mater. , vol.11 , pp. 39-43
    • Shiota, Y.1
  • 3
    • 84866860977 scopus 로고    scopus 로고
    • Electric field-induced magnetization reversal in a perpendicular- anisotropy CoFeB-MgO magnetic tunnel junction
    • 10.1063/1.4753816
    • S. Kanai, " Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.," Appl. Phys. Lett. 101, 122403 (2012). 10.1063/1.4753816
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 122403
    • Kanai, S.1
  • 4
    • 84876099866 scopus 로고    scopus 로고
    • Voltage-induced switching of nanoscale magnetic tunnel junctions
    • J. G. Alzate, " Voltage-induced switching of nanoscale magnetic tunnel junctions.," Tech. Dig. IEEE Int. Electron Devices Meet. 2012, 681-684.
    • Tech. Dig. IEEE Int. Electron Devices Meet. , vol.2012 , pp. 681-684
    • Alzate, J.G.1
  • 5
    • 52949096924 scopus 로고    scopus 로고
    • Surface magnetoelectric effect in ferromagnetic metal films
    • 10.1103/PhysRevLett.101.137201
    • C.-G. Duan, " Surface magnetoelectric effect in ferromagnetic metal films.," Phys. Rev. Lett. 101, 137201 (2008). 10.1103/PhysRevLett.101. 137201
    • (2008) Phys. Rev. Lett. , vol.101 , pp. 137201
    • Duan, C.-G.1
  • 6
    • 62249137762 scopus 로고    scopus 로고
    • Large voltage-induced magnetic anisotropy change in a few atomic layers of iron
    • 10.1038/nnano.2008.406
    • T. Maruyama, " Large voltage-induced magnetic anisotropy change in a few atomic layers of iron.," Nat. Nanotechnol. 4, 158-161 (2009). 10.1038/nnano.2008.406
    • (2009) Nat. Nanotechnol. , vol.4 , pp. 158-161
    • Maruyama, T.1
  • 7
    • 67949114304 scopus 로고    scopus 로고
    • Voltage-assisted magnetization switching in ultrathin Fe(80)Co(20) alloy layers
    • 10.1143/APEX.2.063001
    • Y. Shiota, " Voltage-assisted magnetization switching in ultrathin Fe(80)Co(20) alloy layers.," Appl. Phys. Express 2, 063001 (2009). 10.1143/APEX.2.063001
    • (2009) Appl. Phys. Express , vol.2 , pp. 063001
    • Shiota, Y.1
  • 8
    • 77953558717 scopus 로고    scopus 로고
    • Electric field effect on magnetization at the Fe/MgO(001) interface
    • 10.1063/1.3443658
    • M. K. Niranjan, " Electric field effect on magnetization at the Fe/MgO(001) interface.," Appl. Phys. Lett. 96, 222504 (2010). 10.1063/1.3443658
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 222504
    • Niranjan, M.K.1
  • 9
    • 77956063200 scopus 로고    scopus 로고
    • Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co(40)Fe(40)B(20)/Ta structures
    • 10.1063/1.3429592
    • M. Endo, " Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co(40)Fe(40)B(20)/Ta structures.," Appl. Phys. Lett. 96, 212503 (2010). 10.1063/1.3429592
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 212503
    • Endo, M.1
  • 10
    • 77951169630 scopus 로고    scopus 로고
    • Voltage induced magnetic anisotropy change in ultrathin Fe(80)Co(20)/MgO junctions with Brillouin light scattering
    • 10.1063/1.3385732
    • S. S. Ha, " Voltage induced magnetic anisotropy change in ultrathin Fe(80)Co(20)/MgO junctions with Brillouin light scattering.," Appl. Phys. Lett. 96, 142512 (2010). 10.1063/1.3385732
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 142512
    • Ha, S.S.1
  • 11
    • 74549119453 scopus 로고    scopus 로고
    • Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
    • 10.1063/1.3279157
    • T. Nozaki, " Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions.," Appl. Phys. Lett. 96, 022506 (2010). 10.1063/1.3279157
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 022506
    • Nozaki, T.1
  • 12
    • 80051734782 scopus 로고    scopus 로고
    • Multi-ferroic and magnetoelectric materials and interfaces
    • 10.1098/rsta.2010.0344
    • J. P. Velev, " Multi-ferroic and magnetoelectric materials and interfaces.," Philos. Trans. R. Soc. London, Ser. A 369, 3069-3097 (2011). 10.1098/rsta.2010.0344
    • (2011) Philos. Trans. R. Soc. London, Ser. A , vol.369 , pp. 3069-3097
    • Velev, J.P.1
  • 13
    • 84861661501 scopus 로고    scopus 로고
    • Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer
    • 10.1038/nphys2298
    • T. Nozaki, " Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer.," Nat. Phys. 8, 492-497 (2012). 10.1038/nphys2298
    • (2012) Nat. Phys. , vol.8 , pp. 492-497
    • Nozaki, T.1
  • 14
    • 84858201481 scopus 로고    scopus 로고
    • Magnetoelectric charge trap memory
    • 10.1021/nl204114t
    • U. Bauer, " Magnetoelectric charge trap memory.," Nano Lett. 12, 1437-1442 (2012). 10.1021/nl204114t
    • (2012) Nano Lett. , vol.12 , pp. 1437-1442
    • Bauer, U.1
  • 15
    • 84861080261 scopus 로고    scopus 로고
    • Voltage-induced ferromagnetic resonance in magnetic tunnel junctions
    • 10.1103/PhysRevLett.108.197203
    • J. Zhu, " Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.," Phys. Rev. Lett. 108, 197203 (2012). 10.1103/PhysRevLett.108. 197203
    • (2012) Phys. Rev. Lett. , vol.108 , pp. 197203
    • Zhu, J.1
  • 16
    • 85042900060 scopus 로고    scopus 로고
    • Voltage-controlled magnetic anisotropy in spintronic devices
    • 10.1142/S2010324712400024
    • P. Khalili Amiri and K. L. Wang, " Voltage-controlled magnetic anisotropy in spintronic devices.," Spin 2, 1240002 (2012). 10.1142/S2010324712400024
    • (2012) Spin , vol.2 , pp. 1240002
    • Khalili Amiri, P.1    Wang, K.L.2
  • 17
    • 0030174367 scopus 로고    scopus 로고
    • Current-driven excitation of magnetic multilayers
    • 10.1016/0304-8853(96)00062-5
    • J. C. Slonczewski, " Current-driven excitation of magnetic multilayers.," J. Magn. Magn. Mater. 159, L1-L7 (1996). 10.1016/0304-8853(96)00062-5
    • (1996) J. Magn. Magn. Mater. , vol.159
    • Slonczewski, J.C.1
  • 18
    • 0001317947 scopus 로고    scopus 로고
    • Emission of spin waves by a magnetic multilayer traversed by a current
    • 10.1103/PhysRevB.54.9353
    • L. Berger, " Emission of spin waves by a magnetic multilayer traversed by a current.," Phys. Rev. B 54, 9353-9358 (1996). 10.1103/PhysRevB.54.9353
    • (1996) Phys. Rev. B , vol.54 , pp. 9353-9358
    • Berger, L.1
  • 19
    • 0141636577 scopus 로고    scopus 로고
    • Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars
    • 10.1103/PhysRevLett.84.3149
    • J. A. Katine, " Current-driven magnetization reversal and spin-wave excitations in Co/Cu/Co pillars.," Phys. Rev. Lett. 84, 3149-3152 (2000). 10.1103/PhysRevLett.84.3149
    • (2000) Phys. Rev. Lett. , vol.84 , pp. 3149-3152
    • Katine, J.A.1
  • 20
    • 4043083136 scopus 로고    scopus 로고
    • Spin-current interaction with a monodomain magnetic body: A model study
    • 10.1103/PhysRevB.62.570
    • J. Z. Sun, " Spin-current interaction with a monodomain magnetic body: A model study.," Phys. Rev. B 62, 570-578 (2000). 10.1103/PhysRevB.62.570
    • (2000) Phys. Rev. B , vol.62 , pp. 570-578
    • Sun, J.Z.1
  • 21
    • 37649033021 scopus 로고    scopus 로고
    • Thermally assisted magnetization reversal in the presence of a spin-transfer torque
    • 10.1103/PhysRevB.69.134416
    • Z. Li and S. Zhang, " Thermally assisted magnetization reversal in the presence of a spin-transfer torque.," Phys. Rev. B 69, 134416 (2004). 10.1103/PhysRevB.69.134416
    • (2004) Phys. Rev. B , vol.69 , pp. 134416
    • Li, Z.1    Zhang, S.2
  • 22
    • 2442459621 scopus 로고    scopus 로고
    • Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
    • 10.1063/1.1707228
    • Y. M. Huai, " Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions.," Appl. Phys. Lett. 84, 3118-3120 (2004). 10.1063/1.1707228
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 3118-3120
    • Huai, Y.M.1
  • 23
    • 77956031280 scopus 로고    scopus 로고
    • A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
    • 10.1038/nmat2804
    • S. Ikeda, " A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction.," Nature Mater. 9, 721-724 (2010). 10.1038/nmat2804
    • (2010) Nature Mater. , vol.9 , pp. 721-724
    • Ikeda, S.1
  • 24
    • 78751486497 scopus 로고    scopus 로고
    • Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions
    • 10.1063/1.3536482
    • D. C. Worledge, " Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions.," Appl. Phys. Lett. 98, 022501 (2011). 10.1063/1.3536482
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 022501
    • Worledge, D.C.1
  • 25
    • 79952946363 scopus 로고    scopus 로고
    • Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
    • 10.1063/1.3567780
    • P. K. Amiri, " Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions.," Appl. Phys. Lett. 98, 112507 (2011). 10.1063/1.3567780
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 112507
    • Amiri, P.K.1
  • 26
    • 84864214488 scopus 로고    scopus 로고
    • High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy
    • 10.1021/nn301222v
    • Z. Zeng, " High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy.," ACS Nano 6, 6115-6121 (2012). 10.1021/nn301222v
    • (2012) ACS Nano , vol.6 , pp. 6115-6121
    • Zeng, Z.1
  • 27
    • 84872087884 scopus 로고    scopus 로고
    • This switching approach is unidirectional for a fixed external magnetic field. Experimentally, however, this can be resolved by allowing for a non-zero current to flow through the device, thus, providing additional current-induced torque
    • This switching approach is unidirectional for a fixed external magnetic field. Experimentally, however, this can be resolved by allowing for a non-zero current to flow through the device, thus, providing additional current-induced torque.
  • 28
    • 39949085230 scopus 로고    scopus 로고
    • Device implications of spin-transfer torques
    • 10.1016/j.jmmm.2007.12.013
    • J. A. Katine and E. E. Fullerton, " Device implications of spin-transfer torques.," J. Magn. Magn. Mater. 320, 1217-1226 (2008). 10.1016/j.jmmm.2007.12.013
    • (2008) J. Magn. Magn. Mater. , vol.320 , pp. 1217-1226
    • Katine, J.A.1    Fullerton, E.E.2
  • 29
    • 77952871433 scopus 로고    scopus 로고
    • Advances and future prospects of spin-transfer torque random access memory
    • 10.1109/TMAG.2010.2042041
    • E. Chen, " Advances and future prospects of spin-transfer torque random access memory.," IEEE Trans. Magn. 46, 1873-1878 (2010). 10.1109/TMAG.2010.2042041
    • (2010) IEEE Trans. Magn. , vol.46 , pp. 1873-1878
    • Chen, E.1
  • 30
    • 78651066224 scopus 로고    scopus 로고
    • Development of embedded STT-MRAM for mobile system-on-chips
    • 10.1109/TMAG.2010.2075920
    • K. Lee and S. H. Kang, " Development of embedded STT-MRAM for mobile system-on-chips.," IEEE Trans. Magn. 47, 131-136 (2011). 10.1109/TMAG.2010.2075920
    • (2011) IEEE Trans. Magn. , vol.47 , pp. 131-136
    • Lee, K.1    Kang, S.H.2
  • 31
    • 84872061400 scopus 로고    scopus 로고
    • Note, however, that the validity of the present analysis does not depend on the sign of the VCMA effect
    • Note, however, that the validity of the present analysis does not depend on the sign of the VCMA effect.
  • 32
    • 77952791735 scopus 로고    scopus 로고
    • Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation
    • 10.1109/TMAG.2010.2041330
    • D. Apalkov, " Comparison of scaling of in-plane and perpendicular spin transfer switching technologies by micromagnetic simulation.," IEEE Trans. Magn. 46, 2240-2243 (2010). 10.1109/TMAG.2010.2041330
    • (2010) IEEE Trans. Magn. , vol.46 , pp. 2240-2243
    • Apalkov, D.1
  • 33
    • 78650867845 scopus 로고    scopus 로고
    • Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM
    • 10.1109/LED.2010.2082487
    • P. K. Amiri, " Low write-energy magnetic tunnel junctions for high-speed spin-transfer-torque MRAM.," IEEE Electron Device Lett. 32, 57-59 (2011). 10.1109/LED.2010.2082487
    • (2011) IEEE Electron Device Lett. , vol.32 , pp. 57-59
    • Amiri, P.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.