High-power coherent microwave emission from magnetic tunnel junction nano-oscillators with perpendicular anisotropy

ACS Nano

Volumn 6, Issue 7, 2012, Pages 6115-6121

  Zeng, Zhongming ^a,h   Amiri, Pedram Khalili ^a   Krivorotov, Ilya N ^b   Zhao, Hui ^c   Finocchio, Giovanni ^d   Wang, Jian Ping ^c   Katine, Jordan A ^e   Huai, Yiming ^f   Langer, Juergen ^g   Galatsis, Kosmas ^a   Wang, Kang L ^a   Jiang, Hongwen ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c University of Minnesota   (United States)

^d UNIVERSITY OF MESSINA   (Italy)

^e SAN JOSE RESEARCH CENTER   (United States)

^f Avalanche Technology   (United States)

^g Singulus Technologies   (Germany)

^h SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

magnetic tunnel junction; magnetoresistance; microwave; perpendicular anisotropy; spin transfer nano oscillators

Indexed keywords

COHERENT MICROWAVES; FERROMAGNETS; FREE LAYERS; HIGH-POWER; MAGNETIC TUNNEL JUNCTION; MICROWAVE SIGNALS; NANO SCALE; NARROW-LINE WIDTH; OUTPUT POWER; PERPENDICULAR ANISOTROPY; RADIO FREQUENCY INTEGRATED CIRCUITS; REFERENCE LAYER; SILICON OSCILLATOR; SPIN ANGULAR MOMENTUM; SPIN TRANSFER; SPIN-POLARIZED CURRENTS;

ANISOTROPY; COBALT COMPOUNDS; DIGITAL INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; EXCITED STATES; MAGNETIC DEVICES; MAGNETORESISTANCE; MICROWAVES; NANOTECHNOLOGY;

MICROWAVE OSCILLATORS;

EID: 84864214488     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn301222v     Document Type: Article

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