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Volumn 25, Issue 3, 2013, Pages

Lattice stability and formation energies of intrinsic defects in Mg 2Si and Mg2Ge via first principles simulations

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO STUDY; FORMATION ENERGIES; GROWTH CONDITIONS; INTRINSIC DEFECTS; INTRINSIC DOPING; LATTICE STABILITY; N-DOPING; OPTIMAL DOPING; P-TYPE; THERMOELECTRIC PROPERTIES; VIA FIRST;

EID: 84872057130     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/3/035403     Document Type: Article
Times cited : (56)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.